參數(shù)資料
型號(hào)： MX26F128J3
廠商： Electronic Theatre Controls, Inc.
英文描述： Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY
中文描述： 旺宏NBit商標(biāo)家庭128M的內(nèi)存[x8/x16]單3V頁(yè)模式eLiteFlash商標(biāo)記憶
文件頁(yè)數(shù)： 9/47頁(yè)
文件大?。?/td> 439K
代理商： MX26F128J3
9
P/N:PM0960
REV. 1.1,OCT. 18, 2004
MX26F128J3
NOTES:
1. Bus operations are defined in Table 2.
2. X = Any valid address within the device.
BA = Address within the block.
IA = Identifier Code Address: see Figure 2 and Table 14.
QA = Query database Address.
PA = Address of memory location to be programmed.
RCD = Data to be written to the read configuration register. This data is presented to the device on A 16-1 ; all other
address inputs are ignored.
3. ID = Data read from Identifier Codes.
QD = Data read from Query database.
SRD = Data read from status register. See Table 15 for a description of the status register bits.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE.
CC = Configuration Code.
4. The upper byte of the data bus (Q8-Q15) during command writes is a "Don't Care" in x16 operation.
5. Following the Read Identifier Codes command, read operations access manufacturer, device and block lock
codes. See Section 4.3 for read identifier code data.
6. If the WSM is running, only Q7 is valid; Q15-Q8 and Q6-Q0 float, which places them in a high impedance state.
7. After the Write to Buffer command is issued check the XSR to make sure a buffer is available for writing.
8. The number of bytes/words to be written to the Write Buffer = N + 1, where N = byte/word count argument.
Count ranges on this device for byte mode are N = 00H to N = 1FH and for word mode are N = 0000H to N =000FH.
The third and consecutive bus cycles, as determined by N, are for writing data into the Write Buffer.
The Confirm command (D0H) is expected after exactly N + 1 write cycles; any other command at that point in the
sequence aborts the write to buffer operation. Please see Figure 4. "Write to Buffer Flowchart" for additional
information.
9. The write to buffer or erase operation does not begin until a Confirm command (D0h) is issued.
10.Attempts to issue a block erase or program to a locked block.
11.Either 40H or 10H are recognized by the WSM as the byte/word program setup.
12.The clear block lock-bits operation simultaneously clears all block lock-bits.
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MX26F128J3TC-12 Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MX26F128J3TC-12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY
MX26F128J3TC-15 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY
MX26F128J3XCC-12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY
MX26F128J3XCC-15 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY
MX26F640J3 制造商:MCNIX 制造商全稱:Macronix International 功能描述:64M [x8/x16] SINGLE 3V PAGE MODE eLiteFlashTM MEMORY
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