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參數(shù)資料
| 型號： | MX26F128J3 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY |
| 中文描述： | 旺宏NBit商標(biāo)家庭128M的內(nèi)存[x8/x16]單3V頁模式eLiteFlash商標(biāo)記憶 |
| 文件頁數(shù)： | 37/47頁 |
| 文件大小： | 439K |
| 代理商： | MX26F128J3 |
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37
P/N:PM0960
REV. 1.1,OCT. 18, 2004
MX26F128J3
Versions
(All units in ns unless otherwise noted)
VCC 3.0V-3.6V(3)
VCCQ 3.0V-3.6V(3)
120
Notes
Min
120
150
Min
150
Sym
tAVAV
tAVQV
tELQV
tGLQV
tPHQV
tELQX
tGLQX
tEHQZ
tGHQZ
tOH
Parameter
Read/Write Cycle Time
Address to Output Delay
CEX to Output Delay
OE to Non-Array Output Delay
RESET High to Output Delay
CEX to Output in Low Z
OE to Output in Low Z
CEX High to Output in High Z
OE High to Output in High Z
Output Hold from Address, CEX, or OE
Change, Whichever Occurs First
CEX Low to BYTE High or Low
tFLQV/tFHQV BYTE to Output Delay
tFLQZ
BYTE to Output in High Z
tEHEL
CEx High to CEx Low
tAPA
Page Address Access Time
tGLQV
OE to Array Output Delay
Max
Max
120
120
50
210
150
150
50
210
2, 4
5
5
5
5
5
0
0
0
0
35
15
35
15
0
0
tELFL/tELFH
5
10
10
1000
1000
1000
1000
5
5
0
0
5, 6
4
25
25
25
25
AC Characteristics --Read-Only Operations (1,2)
NOTES:CEX low is defined as the first edge of CE0 , CE1 , or CE2 that enables the device. CEX high is defined at
the first edge of CE0, CE1, or CE2 that disables the device (see Table 2).
1. See AC Input/Output Reference Waveforms for the maximum allowable input slew rate.
2. OE may be delayed up to t ELQV -t GLQV after the first edge of CE0, CE1, or CE2 that enables the device (see
Table 2) without impact on t ELQV .
3. See Figures 14-16, Transient Input/Output Reference Waveform for VCCQ = 3.0V - 3.6V, Transient Equivalent
Testing Load Circuit for testing characteristics. VCC = 3.0V - 3.6V.
4. When reading the eLiteFlash
TM
memory array a faster tGLQV (R16) applies. Non-array reads refer to status register
reads, query reads, or device identifier reads.
5. Sampled, not 100% tested.
6. For devices configured to standard word/byte read mode, R15 (tAPA) will equal R2 (tAVQV).
相關(guān)PDF資料 |
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| MX26F128J3TC-12 | Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY |
| MX26F128J3TC-15 | Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY |
| MX26F128J3XCC-12 | Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY |
| MX26F128J3XCC-15 | Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MX26F128J3TC-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY |
| MX26F128J3TC-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY |
| MX26F128J3XCC-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY |
| MX26F128J3XCC-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY |
| MX26F640J3 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:64M [x8/x16] SINGLE 3V PAGE MODE eLiteFlashTM MEMORY |
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