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參數(shù)資料
| 型號： | MW6IC2420NBR1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF LDMOS Integrated Power Amplifier |
| 中文描述： | 射頻LDMOS集成功率放大器 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 494K |
| 代理商： | MW6IC2420NBR1 |
MW6IC2420NBR1
1
RF Device Data
Freescale Semiconductor
RF LDMOS Integrated
Power Amplifier
The MW6IC2420NB integrated circuit is designed with on-chip matching
that makes it usable at 2450 MHz. This multi-stage structure is rated for 26 to
32 Volt operation and covers all typical industrial, scientific and medical
modulation formats.
Driver Applications
Typical CW Performance at 2450 MHz: V
DD
= 28 Volts, I
DQ1
= 210 mA,
I
DQ2
= 370 mA, P
out
= 20 Watts
Power Gain — 19.5 dB
Power Added Efficiency — 27%
Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW
Output Power
Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 10 W CW
P
out
.
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source Scattering Parameters
On-Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
Integrated ESD Protection
200
°
C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
(Top View)
GND
V
DS1
NC
NC
NC
RF
in
V
GS1
V
GS2
V
GND
NC
RF
out
/
V
DS2
GND
1
2
3
4
5
6
7
8
9
10
11
16
15
14
13
12
GND
Quiescent Current
Temperature Compensation
V
DS1
RF
in
V
GS1
V
GS2
V
DS1
RF
out
/V
DS2
NC
NC
Note: Exposed backside of the package is
the source terminal for the transistors.
Document Number: MW6IC2420N
Rev. 0, 3/2007
Freescale Semiconductor
Technical Data
2450 MHz, 20 W, 28 V
CW
RF LDMOS INTEGRATED POWER
AMPLIFIER
MW6IC2420NBR1
CASE 1329-09
TO-272 WB-16
PLASTIC
Freescale Semiconductor, Inc., 2007. All rights reserved.
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