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參數(shù)資料
| 型號： | MW6S010GNR1 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor |
| 中文描述： | RF功率場效應晶體管 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大小： | 542K |
| 代理商： | MW6S010GNR1 |
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for Class A or Class AB base station applications with frequencies
up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
Typical Two-Tone Performance @ 960 MHz, V
DD
= 28 Volts, I
DQ
=
125 mA, P
out
= 10 Watts PEP
Power Gain — 18 dB
Drain Efficiency — 32%
IMD — -37 dBc
Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
On-Chip RF Feedback for Broadband Stability
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
N Suffix Indicates Lead-Free Terminations
200
°
C Capable Plastic Package
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +68
Vdc
Gate-Source Voltage
V
GS
-0.5, +12
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
61.4
0.35
W
W/
°
C
Storage Temperature Range
T
stg
- 65 to +175
°
C
Operating Junction Temperature
T
J
200
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1.2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80
°
C, 10 W PEP
R
θ
JC
2.85
°
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MW6S010
Rev. 1, 5/2005
Freescale Semiconductor
Technical Data
MW6S010NR1
MW6S010GNR1
MW6S010MR1
MW6S010GMR1
450-1500 MHz, 10 W, 28 V
LATERAL N-CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265-08, STYLE 1
TO-270-2
PLASTIC
MW6S010NR1(MR1)
CASE 1265A-02, STYLE 1
TO-270-2 GULL
PLASTIC
MW6S010GNR1(GMR1)
Freescale Semiconductor, Inc., 2005. All rights reserved.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MW6S010GNR1-CUT TAPE | 制造商:Freescale 功能描述:MW6S010 Series 450-1500 MHz 10 W 28 V Lateral N-Ch RF Power MOSFET |
| MW6S010MR1 | 功能描述:MOSFET RF N-CH 28V 10W TO-270-2 RoHS:否 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MW6S010NR1 | 功能描述:射頻MOSFET電源晶體管 HV6 900MHZ 10W TO270-2N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MW6S010NR1_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MW6S-12A | 制造商:TE Connectivity 功能描述:MW6S-12A = MW 6GHZ SENSITIVE H |
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