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參數(shù)資料
| 型號： | MW6S004NT1 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor |
| 中文描述： | RF功率場效應晶體管 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大?。?/td> | 504K |
| 代理商： | MW6S004NT1 |
MW6S004NT1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for Class A or Class AB base station applications with frequencies
up to 2000 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
Typical Two-Tone Performance @ 1960 MHz, 28 Volts, I
DQ
= 50 mA,
P
out
= 4 Watts PEP
Power Gain — 18 dB
Drain Efficiency — 33%
IMD — -34 dBc
Typical Two-Tone Performance @ 900 MHz, 28 Volts, I
DQ
= 50 mA,
P
out
= 4 Watts PEP
Power Gain — 19 dB
Drain Efficiency — 33%
IMD — -39 dBc
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output
Power
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
On-Chip RF Feedback for Broadband Stability
Integrated ESD Protection
RoHS Compliant
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +68
Vdc
Gate-Source Voltage
V
GS
-0.5, +12
Vdc
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
150
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 76
°
C, 4 W PEP, Two-Tone
Case Temperature 79
°
C, 4 W CW
R
θ
JC
8.8
8.5
°
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1A (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
III (Minimum)
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MW6S004N
Rev. 2, 2/2007
Freescale Semiconductor
Technical Data
MW6S004NT1
1-2000 MHz, 4 W, 28 V
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 466-03, STYLE 1
PLD 1.5
PLASTIC
Freescale Semiconductor, Inc., 2007. All rights reserved.
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