參數(shù)資料
型號(hào)： MTW14N50E
廠商： MOTOROLA INC
元件分類： JFETs
英文描述： CONNECTOR ACCESSORY
中文描述： 14 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
文件頁數(shù)： 2/8頁
文件大?。?/td> 205K
代理商： MTW14N50E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 V, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
500
—
—
520
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 500 Vdc, VGS = 0)
(VDS = 500 Vdc, VGS = 0, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
—
—
—
—
250
1000
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS*
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.2
7.0
4.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 7.0 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 14 Adc)
(ID = 7.0 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
—
0.32
0.40
Ohm
—
—
—
—
6.7
5.6
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 7.0 Adc)
gFS
5.0
—
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0,
f = 1.0 MHz)
25 Vdc V
Ciss
Coss
Crss
—
2510
3510
pF
Output Capacitance
—
280
392
Reverse Transfer Capacitance
—
67
94
SWITCHING CHARACTERISTICS*
=
Turn–On Delay Time
(VDD = 250 Vdc, ID = 14 Adc,
VGS= 10 Vdc
VGS = 10 Vdc,
RG = 4.7
td(on)
tr
td(off)
tf
QT
—
28
60
ns
Rise Time
—
80
160
Turn–Off Delay Time
—
80
160
Fall Time
)
—
60
120
Gate Charge
(VDS = 400 Vdc,D
(DS
VGS = 10 Vdc)
—
65
85
nC
Q1
Q2
Q3
—
17
—
,
—
47
—
—
34
—
SOURCE–DRAIN DIODE CHARACTERISTICS*
Forward On–Voltage
(IS = 14 Adc, VGS
(S
(IS = 14 Adc, VGS = 0, TJ = 125
°
C)
VSD
—
—
1.0
0 9
0.9
1.6
—
Vdc
)
Reverse Recovery Time
(IS = 14 Adc, VGS
(S
dIS/dt = 100 A/
μ
s, VGS = 0)
trr
ta
tb
—
390
—
ns
—
245
—
,
—
145
—
Reverse Recovery Stored Charge
QRR
—
5.35
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
5.0
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
13
—
nH
*Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
=
Switching characteristics are independent of operating junction temperature.
相關(guān)PDF資料
PDF描述
MTW45N10E TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM
MTW45N10 TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM
MTY14N100E TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM
MTY14N100 TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM
MTY25N60E TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM
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