參數(shù)資料
型號(hào): MTW14N50E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: CONNECTOR ACCESSORY
中文描述: 14 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 205K
代理商: MTW14N50E
1
Motorola TMOS Power MOSFET Transistor Device Data
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N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Designed to Replace External Zener Transient Suppressor —
Absorbs High Energy in the Avalanche Mode
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
ID
ID
IDM
500
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage — Continuous
500
Vdc
±
20
Vdc
Drain Current — Continuous
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
10
μ
s)
14
9.0
60
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
PD
180
1.44
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 150
°
C
Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25
°
C
(VDD = 50 Vdc, VGS = 10 Vpk, IL = 14 Apk, L = 8.8 mH, RG = 25
)
860
mJ
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
R
θ
JC
R
θ
JA
TL
0.7
40
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
from case for 10 seconds
260
°
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 4
Order this document
by MTW14N50E/D
SEMICONDUCTOR TECHNICAL DATA
CASE 340K–01, Style 1
TO–247AE
TMOS POWER FET
14 AMPERES
500 VOLTS
RDS(on) = 0.40 OHM
Motorola Preferred Device
D
S
G
相關(guān)PDF資料
PDF描述
MTW45N10E TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM
MTW45N10 TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM
MTY14N100E TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM
MTY14N100 TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM
MTY25N60E TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM
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