參數(shù)資料
型號(hào): MTP3N60E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
中文描述: 3 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 6/8頁
文件大?。?/td> 183K
代理商: MTP3N60E
6
Motorola TMOS Power MOSFET Transistor Device Data
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 16. Capacitance Variation
C
VGS
VDS
VGS = 0 V
0
Ciss
Coss
Crss
1600
1400
1200
25
20
10
0
5
10
Figure 17. Gate Charge versus
Gate–To–Source Voltage
Qg, TOTAL GATE CHARGE (nC)
16
0
0
10
12
8
4
20
30
40
1000
Figure 18. Gate Charge Test Circuit
Vin
15 V
100 k
47 k
2N3904
2N3904
1 mA
+18 V
VDD
10 V
100 k
0.1
μ
F
100
FERRITE
BEAD
DUT
SAME
DEVICE TYPE
AS DUT
Vin = 15 Vpk; PULSE WIDTH
100
μ
s, DUTY CYCLE
10%
5
15
800
600
VDS = 100 V
V
TJ = 25
°
C
ID = 3 A
250 V
420 V
400
200
TJ = 25
°
C
VDS = 0 V
5
15
25
35
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