參數(shù)資料
型號(hào): MTP3N60E
廠(chǎng)商: MOTOROLA INC
元件分類(lèi): JFETs
英文描述: TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
中文描述: 3 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 183K
代理商: MTP3N60E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 2. Gate–Threshold Voltage Variation
With Temperature
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 4. Breakdown Voltage Variation
With Temperature
ID, DRAIN CURRENT (AMPS)
Figure 5. On–Resistance versus Drain Current
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 6. On–Resistance Variation
With Temperature
R
R
(
I
V
V
(
8
6
4
2
20
16
12
8
4
0
1.2
1.1
1
0.9
0.8
–50
–25
0
25
50
75
100
125
150
10
8
6
4
0
8
6
4
2
0
1.2
1.1
1
0.9
0.8
–50
0
50
100
150
6
2
0
10
6
4
2
0
7 V
6 V
5 V
VDS = VGS
ID = 0.25 mA
TJ = 25
°
C
–55
°
C
100
°
C
VGS = 0
ID = 250
μ
A
VGS = 10 V
VGS = 10 V
ID = 2 A
I
VGS = 10 V
0.7
VDS
10 V
1
3
5
7
9
–25
25
75
125
–50
0
50
100
150
–25
25
75
125
0
4
TJ = 25
°
C
–55
°
C
100
°
C
3
0
2
1
2
6
10
14
18
2
8
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