參數(shù)資料
型號(hào): MTP3N50E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
中文描述: 3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 251K
代理商: MTP3N50E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 2. Gate–Threshold Voltage Variation
With Temperature
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 4. Breakdown Voltage Variation
With Temperature
ID, DRAIN CURRENT (AMPS)
Figure 5. On–Resistance versus Drain Current
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 6. On–Resistance versus Temperature
R
R
(
I
V
V
(
6
5
4
3
2
20
16
12
8
4
0
1.2
1.1
1
0.9
0.8
–50
–25
0
25
50
75
100
125
150
5
4
3
2
1
0
8
6
4
2
0
1.2
1.1
1
0.9
0.8
–50
0
50
100
150
8
6
4
2
5
4
3
2
1
0
2.5
2
1.5
1
0.5
TJ = 25
°
C
7 V
6 V
5 V
VDS = VGS
ID = 0.25 mA
TJ = –55
°
C
25
°
C
100
°
C
VGS = 0
ID = 250
μ
A
TJ = 100
°
C
25
°
C
–55
°
C
VGS = 10 V
VGS = 10 V
ID = 1.5 A
I
VGS = 10 V
4 V
VDS
10 V
1
0
2
6
10
14
18
0
–50
–25
0
25
50
75
100
125
150
相關(guān)PDF資料
PDF描述
MTP3N50 TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
MTP3N60E TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
MTP40N10E CONNECTOR ACCESSORY
MTP4N40E TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM
MTP4N50E TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
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