參數資料
型號: MTP1N100E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM
中文描述: 1 A, 1000 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數: 6/8頁
文件大?。?/td> 203K
代理商: MTP1N100E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
0.1
1.0
1000
10
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
100
1.0
10
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
A
I
0.1
t, TIME (s)
Figure 13. Thermal Response
r
T
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
25
150
0
1.0E–05
1.0E–04
0.1
1.0
0.01
1.0E–03
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
D = 0.5
50
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
50
100
125
75
40
30
20
10
ID = 1 A
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
1.0E–02
1.0E–01
1.0E+00
1.0E+01
10
μ
s
100
μ
s
1 ms
10 ms
dc
相關PDF資料
PDF描述
MTP1N50E TMOS POWER FET 1.0 AMPERES 500 VOLTS RDS(on) = 5.0 OHM
MTP1N60 Power Field Effect Transister N-Channel Enhancement Mode Silicon Gate
MTP2955E TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM
MTP2955V TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM
MTP2955 TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM
相關代理商/技術參數
參數描述
MTP1N50E 制造商:Rochester Electronics LLC 功能描述:- Bulk
MTP1N60 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Power Field Effect Transister N-Channel Enhancement Mode Silicon Gate
MTP1N60E 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述:
MTP1N80E 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMS
MTP1S-E10-C 功能描述:電纜束帶 Mutiple Tie Plate, 1 Bundle, M-S Ties, # RoHS:否 制造商:Phoenix Contact 產品:Cable Tie Mounts 類型:Adhesive 顏色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 長度:19 mm 寬度:19 mm 抗拉強度: