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參數(shù)資料
| 型號(hào)： | MTP1N100E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM |
| 中文描述： | 1 A, 1000 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 203K |
| 代理商： | MTP1N100E |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
R
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 25
°
C
0
4
8
12
16
20
2.0
1.4
2
6
10
14
18
0.6
5 V
6 V
VGS = 10 V
VDS
≥
10 V
2.0
2.8
3.6
4.4
5.2
2.4
3.2
4.0
4.8
TJ = –55
°
C
25
°
C
100
°
C
TJ = 25
°
C
VGS = 10 V
15 V
6.0
7.2
8.0
6.6
0
0.4
1.6
0.2
1.4
1.8
VGS = 0 V
0
200
400
0.01
100
10000
100
300
600
1.0
500
25
°
C
100
°
C
TJ = 125
°
C
0
0.4
1.2
1.6
0
4
8
16
10
6
2
0.8
2.0
TJ = 100
°
C
25
°
C
–55
°
C
12
VGS = 10 V
–50
0
0.8
1.2
2.0
2.8
–25
0
25
50
75
100
125
150
VGS = 10 V
ID = 0.5 A
4 V
1.8
1.0
0.2
1000
7.0
7.4
7.6
6.8
6.4
0.6
1.0
0.8
1.2
2.0
2.4
1.6
1.2
0.4
1.6
0.8
0
2.0
1.4
0.6
1.8
1.0
0.2
1.2
0.4
1.6
0.8
0
5.6
14
0.2
0.6
1.4
1.8
1.0
7.8
6.2
10
0.1
800
700
1000
900
0.4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP1N50E | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| MTP1S-E10-C | 功能描述:電纜束帶 Mutiple Tie Plate, 1 Bundle, M-S Ties, # RoHS:否 制造商:Phoenix Contact 產(chǎn)品:Cable Tie Mounts 類型:Adhesive 顏色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 長(zhǎng)度:19 mm 寬度:19 mm 抗拉強(qiáng)度: |
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