參數(shù)資料
型號： MTD10N10ELT4
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount
中文描述： 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369C-01, DPAK-3
文件頁數(shù)： 2/8頁
文件大?。?/td> 93K
代理商： MTD10N10ELT4
MTD10N10EL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 0.25 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
100
—
—
115
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
(V
DS
= 100 Vdc, V
GS
= 0 Vdc, T
J
= 125
°
C)
I
DSS
—
—
—
—
10
100
μ
Adc
GateBody Leakage Current (V
GS
=
±
15 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
100
nAdc
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
—
1.45
4.0
2.0
—
Vdc
mV/
°
C
Static DraintoSource OnResistance (V
GS
= 5.0 Vdc, I
D
= 5.0 Adc)
R
DS(on)
—
0.17
0.22
Ohm
DraintoSource OnVoltage
(V
GS
= 5.0 Vdc, I
D
= 10 Adc)
(V
GS
= 5.0 Vdc, I
D
= 5.0 Adc, T
J
= 125
°
C)
V
DS(on)
—
—
1.85
—
2.6
2.3
Vdc
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 5.0 Adc)
g
FS
2.5
7.9
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
—
741
1040
pF
Output Capacitance
C
oss
—
175
250
Reverse Transfer Capacitance
C
rss
—
18.9
40
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(on)
—
11
20
ns
Rise Time
(V
DD
= 50 Vdc, I
D
= 10 Adc,
= 5 0 Vdc
V
GS
= 5.0 Vdc,
= 9.1
R
G
)
t
r
—
74
150
TurnOff Delay Time
t
d(off)
—
17
30
Fall Time
t
f
—
38
80
Gate Charge
(See Figure 8)
Q
T
—
9.3
15
nC
= 80 Vdc, I
= 10 Adc,
(V
DS
80 Vdc, I
D
10 Adc,
V
GS
= 5.0 Vdc)
Q
1
—
2.56
—
Q
2
—
4.4
—
Q
3
—
4.66
—
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 3)
(I
S
= 10 Adc, V
GS
= 0 Vdc)
(I
S
= 10 Adc, V
GS
= 0 Vdc, T
J
= 125
°
C)
V
SD
—
—
0.98
0.898
1.6
—
Vdc
Reverse Recovery Time
(See Figure 14)
t
rr
—
124.7
—
ns
S
= 10 Adc, V
GS
= 0 Vdc,
(I
10 Adc, V
0 Vdc,
dI
S
/dt = 100 A/
μ
s)
t
a
—
86
—
t
b
—
38.7
—
Reverse Recovery Stored Charge
Q
RR
—
0.539
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
L
D
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
L
S
—
7.5
—
nH
3. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperature.
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參數(shù)描述
MTD10N10ELT4G 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount
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MTD1110-4102 功能描述:馬達/運動/點火控制器和驅(qū)動器 VCEO=80 IO=2 PT=5 RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Stepper Motor Controllers / Drivers 類型:2 Phase Stepper Motor Driver 工作電源電壓:8 V to 45 V 電源電流:0.5 mA 工作溫度:- 25 C to + 125 C 安裝風格:SMD/SMT 封裝 / 箱體:HTSSOP-28 封裝:Tube
MTD1110-4103 功能描述:馬達/運動/點火控制器和驅(qū)動器 VCEO=80 IO=2 PT=5 RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Stepper Motor Controllers / Drivers 類型:2 Phase Stepper Motor Driver 工作電源電壓:8 V to 45 V 電源電流:0.5 mA 工作溫度:- 25 C to + 125 C 安裝風格:SMD/SMT 封裝 / 箱體:HTSSOP-28 封裝:Tube
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