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參數(shù)資料
| 型號(hào)： | MTB2P50E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 2 Amps, 500 Volts(2A, 500V功率MOSFET) |
| 中文描述： | 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-04, D2PAK-3 |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 85K |
| 代理商： | MTB2P50E |
MTB2P50E
http://onsemi.com
5
DRAINTOSOURCE DIODE CHARACTERISTICS
0.6
1
1.4
1.8
2.4
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
I
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
R
G
, GATE RESISTANCE (OHMS)
1000
t
t
r
t
f
t
d(off)
t
d(on)
V
GS
= 0 V
T
J
= 25
°
C
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
300
V
250
200
150
0
10
6
0
Q
T
, TOTAL CHARGE (nC)
V
12
8
2
4
2
4
6
8
10
12
14
16
18
20
100
50
0
V
DD
= 250 V
I
D
= 2 A
V
GS
= 10 V
T
J
= 25
°
C
100
10
1
10
100
2
1.6
1.2
0.8
0.4
0
0.8
1.2
1.6
Q
1
Q
2
Q
T
V
DS
Q
3
2
2.2
V
GS
I
D
= 2 A
T
J
= 25
°
C
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous draintosource voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (T
C
) of 25
°
C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed
in
AN569,
ResistanceGeneral Data and Its Use.”
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(I
DM
) nor rated voltage (V
DSS
) is exceeded and the
transition time (t
r
,t
f
) do not exceed 10 s. In addition the total
power averaged over a complete switching cycle must not
exceed (T
J(MAX)
T
C
)/(R
JC
).
A Power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For
“Transient
Thermal
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases nonlinearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many EFETs can withstand the stress of
draintosource avalanche at currents up to rated pulsed
current (I
DM
), the energy rating is specified at rated
continuous current (I
D
), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous I
D
can safely be
assumed to equal the values indicated.
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