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參數(shù)資料
| 型號： | MTB2P50E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 2 Amps, 500 Volts(2A, 500V功率MOSFET) |
| 中文描述： | 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-04, D2PAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 85K |
| 代理商： | MTB2P50E |
MTB2P50E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(V
= 0 Vdc, I
= 250 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
500
564
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 500 Vdc, V
GS
= 0 Vdc)
(V
DS
= 500 Vdc, V
GS
= 0 Vdc, T
J
= 125
°
C)
I
DSS
10
100
Adc
GateBody Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0)
I
GSS
100
nAdc
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 Adc)
Temperature Coefficient (Negative)
V
GS(th)
2.0
3.0
4.0
4.0
Vdc
mV/
°
C
Static DrainSource OnResistance (V
GS
= 10 Vdc, I
D
= 1.0 Adc)
R
DS(on)
4.5
6.0
DrainSource OnVoltage (V
GS
= 10 Vdc)
(I
D
= 2.0 Adc)
(I
D
= 1.0 Adc, T
J
= 125
°
C)
V
DS(on)
9.5
14.4
12.6
Vdc
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 1.0 Adc)
g
FS
1.5
2.9
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc, f = 1.0 MHz)
C
iss
845
1183
pF
Output Capacitance
C
oss
100
140
Reverse Transfer Capacitance
C
rss
26
52
SWITCHING CHARACTERISTICS
(Note 3)
TurnOn Delay Time
(V
DD
= 250 Vdc, I
D
= 2.0 Adc,
V
GS
= 10 Vdc, R
G
= 9.1 )
t
d(on)
12
24
ns
Rise Time
t
r
14
28
TurnOff Delay Time
t
d(off)
21
42
Fall Time
t
f
19
38
Gate Charge (See Figure 8)
(V
DS
= 400 Vdc, I
D
= 2.0 Adc, V
GS
= 10 Vdc)
Q
T
19
27
nC
Q
1
3.7
Q
2
7.9
Q
3
9.9
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 2)
(I
S
= 2.0 Adc, V
GS
= 0 Vdc)
(I
S
= 2.0 Adc, V
GS
= 0 Vdc, T
J
= 125
°
C)
V
SD
2.3
1.85
3.5
Vdc
Reverse Recovery Time
(See Figure 14)
(I
S
= 2.0 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ s)
t
rr
223
ns
t
a
161
t
b
62
Reverse Recovery Stored Charge
Q
RR
1.92
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
L
D
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
L
S
7.5
nH
2. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperature.
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