- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371150 > MTB2N40E (MOTOROLA INC) TMOS POWER FET 2.0 AMPERES 400 VOLTS PDF資料下載
參數(shù)資料
| 型號： | MTB2N40E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 2.0 AMPERES 400 VOLTS |
| 中文描述： | 2 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 271K |
| 代理商： | MTB2N40E |
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0
0.5
1
1.5
2.0
2.5
3
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (
°
C)
Figure 15. D2PAK Power Derating Curve
P
R
JA = 50
°
C/W
Board material = 0.065 mil FR–4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size
≈
450 mils x 350 mils
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 13. Thermal Response
,
A
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
A
ID = 2 A
45
35
25
5
0
25
50
75
100
125
150
10
1
0.1
0.01
0.1
1
10
100
1000
100
μ
s
10
μ
s
1 ms
10 ms
dc
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (SECONDS)
D = 0.5
0.2
0.1
r
(
0.05
0.02
0.01
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
10
15
20
30
40
相關PDF資料 |
PDF描述 |
|---|---|
| MTB3N100E | TMOS POWER FET 3.0 AMPERES 1000 VOLTS |
| MTB3N120E | TMOS POWER FET 3.0 AMPERES 1200 VOLTS |
| MTB40N10E | TMOS POWER FET 40 AMPERES 100 VOLTS |
| MTB55N06Z | TMOS POWER FET 55 AMPERES 60 VOLTS |
| MTD1302 | TMOS POWER FET 20 AMPERES 30 VOLTS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MTB2N60E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 600 VOLTS |
| MTB2P50E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 500 VOLTS |
| MTB2P50ET4 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK |
| MTB2P50ET4G | 功能描述:MOSFET PFET 500V 2A 6O RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTB306D | 功能描述:撥動開關 3PDT TOGGLE SWITCH Long Bat Actuator RoHS:否 制造商:C&K Components 觸點形式:DPDT 開關功能:ON - ON - ON 電流額定值: 電壓額定值 AC:20 V 電壓額定值 DC:20 V 功率額定值:0.4 VA 端接類型:V-Bracket 安裝風格: 端子密封:Epoxy 觸點電鍍:Gold 照明:Not Illuminated |
發(fā)布緊急采購，3分鐘左右您將得到回復。