- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371150 > MTB3N100E (MOTOROLA INC) TMOS POWER FET 3.0 AMPERES 1000 VOLTS PDF資料下載
參數(shù)資料
| 型號(hào)： | MTB3N100E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 3.0 AMPERES 1000 VOLTS |
| 中文描述： | 3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 262K |
| 代理商： | MTB3N100E |
1
Motorola TMOS Power MOSFET Transistor Device Data
$#
" "!
N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower RDS(on) capabilities. This high voltage
MOSFET uses an advanced termination scheme to provide
enhanced voltage–blocking capability without degrading perfor-
mance over time. In addition, this advanced TMOS E–FET is
designed to withstand high energy in the avalanche and commuta-
tion modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured — Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
1000
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage — Continuous
Gate–Source Voltage
— Non–Repetitive (tp
≤
10 ms)
Drain Current — Continuous
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation
Derate above 25
°
C
Total Power Dissipation @ TA = 25
°
C, when mounted with the minimum recommended pad size
Operating and Storage Temperature Range
1000
Vdc
±
20
±
40
Vdc
Vpk
3.0
2.4
9.0
Adc
Apk
125
1.0
2.5
Watts
W/
°
C
Watts
TJ, Tstg
EAS
– 55 to 150
°
C
mJ
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vdc, IL = 7.0 Apk, L = 10 mH, RG = 25
)
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
Thermal Resistance
— Junction to Ambient, when mounted with the minimum recommended pad size
245
R
θ
JC
R
θ
JA
R
θ
JA
TL
1.0
62.5
50
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
260
°
C
Order this document
by MTB3N100E/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
3.0 AMPERES
1000 VOLTS
RDS(on) = 4.0 OHM
Motorola Preferred Device
CASE 418B–02, Style 2
D2PAK
D
S
G
REV 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTB3N120E | TMOS POWER FET 3.0 AMPERES 1200 VOLTS |
| MTB40N10E | TMOS POWER FET 40 AMPERES 100 VOLTS |
| MTB55N06Z | TMOS POWER FET 55 AMPERES 60 VOLTS |
| MTD1302 | TMOS POWER FET 20 AMPERES 30 VOLTS |
| MTD15N06 | TMOS POWER FET 15 AMPERES 60 VOLTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTB3N120E | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK Rail |
| MTB3N120ET4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK T/R |
| MTB3N60E | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTB3N60ET4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTB406N | 功能描述:撥動(dòng)開關(guān) 4PDT TOGGLE SWITCH Decorat Bat Actuator RoHS:否 制造商:C&K Components 觸點(diǎn)形式:DPDT 開關(guān)功能:ON - ON - ON 電流額定值: 電壓額定值 AC:20 V 電壓額定值 DC:20 V 功率額定值:0.4 VA 端接類型:V-Bracket 安裝風(fēng)格: 端子密封:Epoxy 觸點(diǎn)電鍍:Gold 照明:Not Illuminated |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。
