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參數(shù)資料
| 型號： | MTB2N40E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 2.0 AMPERES 400 VOLTS |
| 中文描述： | 2 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 271K |
| 代理商： | MTB2N40E |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 25
°
C
VGS = 10 V
15 V
3.0
4.5
VGS = 0 V
0
200
400
100
100
300
TJ = 125
°
C
1000
5.0
4.0
3.5
10
0.5
1.5
3.5
2.5
1
2
4
3
D
I
4
3.2
2.4
1.6
0
0
4
8
12
16
20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS = 10 V
7 V
6 V
8 V
5 V
TJ = 25
°
C
D
I
4
3
2
1
0
2
3
4
5
6
8
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
VDS
≥
10 V
–55
°
C
TJ = 100
°
C
25
°
C
R
2
6
4
0
0
1
2
3
4
ID, DRAIN CURRENT (AMPS)
VGS = 10 V
TJ = 25
°
C
100
°
C
–55
°
C
2.5
0
R
(
TJ, JUNCTION TEMPERATURE (
°
C)
VGS = 10 V
ID = 1 A
–50
0
50
100
150
125
–25
25
75
2.5
2
1.5
1
0.5
0
0.8
7
8
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