參數(shù)資料
型號(hào)： MT58L512L18PS-7.5IT
元件分類： SRAM
英文描述： 512K X 18 CACHE SRAM, 4 ns, PQFP100
封裝： PLASTIC, MS-026BHA, TQFP-100
文件頁(yè)數(shù)： 19/32頁(yè)
文件大小： 616K
代理商： MT58L512L18PS-7.5IT
26
8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L512L18P_2.p65 – Rev. 6/01
2001, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
PIPELINED, SCD SYNCBURST SRAM
READ TIMING PARAMETERS
-5
-6
-7.5
-10
SYMBOL
MIN MAX MIN MAX MIN MAX MIN MAX UNITS
tKC
5.0
6.0
7.5
10
ns
fKF
200
166
133
100
MHz
tKH
2.0
2.3
2.5
3.0
ns
tKL
2.0
2.3
2.5
3.0
ns
tKQ
3.1
3.5
4.0
5.0
ns
tKQX
1.0
1.5
ns
tKQLZ
0
1.5
ns
tKQHZ
3.1
3.5
4.2
5.0
ns
tOEQ
3.1
3.5
4.2
5.0
ns
tOELZ
0000
ns
tOEHZ
3.0
3.5
4.2
4.5
ns
READ TIMING 3
tKC
tKL
CLK
ADSP#
tADSH
tADSS
ADDRESS
tKH
OE#
ADSC#
CE#
(NOTE 2)
tAH
tAS
A1
tCEH
tCES
GW#, BWE#,
BWa#-BWd#
Q
High-Z
tKQLZ
tKQX
tKQ
ADV#
tOEHZ
tKQ
Single READ
BURST READ
tOEQ
tOELZ
tKQHZ
ADV#
suspends
burst.
Burst wraps around
to its initial state.
tAAH
tAAS
tWH
tWS
tADSH
tADSS
Q(A2)
Q(A2 + 1)
Q(A2 + 2)
Q(A1)
Q(A2)
Q(A2 + 1)
Q(A2 + 3)
A2
A3
(NOTE 1)
Deselect
cycle.
(NOTE 3)
(NOTE 4)
Burst continued with
new base address.
DON’T CARE
UNDEFINED
NOTE: 1. Q(A2) refers to output from address A2. Q(A2 + 1) refers to output from the next internal burst address following A2.
2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When
CE# is HIGH, CE2# is HIGH and CE2 is LOW.
3. Timing is shown assuming that the device was not enabled before entering into this sequence. OE# does not cause Q
to be driven until after the following clock rising edge.
4. Outputs are disabled within one clock cycle after deselect.
tAS
1.5
2.0
ns
tADSS
1.5
2.0
ns
tAAS
1.5
2.0
ns
tWS
1.5
2.0
ns
tCES
1.5
2.0
ns
tAH
0.5
ns
tADSH
0.5
ns
tAAH
0.5
ns
tWH
0.5
ns
tCEH
0.5
ns
-5
-6
-7.5
-10
SYMBOL
MIN MAX MIN MAX MIN MAX MIN MAX UNITS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT58L512L18PT-10 制造商:Cypress Semiconductor 功能描述:512KX18 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk
MT58L512L18PT-7.5 制造商:Rochester Electronics LLC 功能描述:- Bulk
MT58L512L18PT-7.5 IT 制造商:Cypress Semiconductor 功能描述:512KX18 SRAM PLASTIC IND TEMP
MT58L512V18F 制造商:MICRON 制造商全稱:Micron Technology 功能描述:8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L512V18P 制造商:MICRON 制造商全稱:Micron Technology 功能描述:8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM
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