參數(shù)資料
型號(hào)： MT58L512L18PS-7.5IT
元件分類： SRAM
英文描述： 512K X 18 CACHE SRAM, 4 ns, PQFP100
封裝： PLASTIC, MS-026BHA, TQFP-100
文件頁數(shù)： 15/32頁
文件大?。?/td> 616K
代理商： MT58L512L18PS-7.5IT
22
8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L512L18P_2.p65 – Rev. 6/01
2001, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
PIPELINED, SCD SYNCBURST SRAM
IDD OPERATING CONDITIONS AND MAXIMUM LIMITS
(0°C
≤ T
A ≤ +70°C; VDD = +3.3V +0.3V/-0.165V; VDDQ = +3.3V +0.3V/-0.165V for 3.3V I/O and
+2.5V +0.4V/-0.125V for 2.5V I/O)
DESCRIPTION
CONDITIONS
SYM
TYP
-5
-6
-7.5
-10
UNITS NOTES
Power Supply
Device selected; All inputs
≤ VIL
Current: Operating
or
≥ VIH; Cycle time ≥ tKC (MIN);
IDD
225
525
475
375
300
mA
1, 2, 3
VDD = MAX; Outputs open
Power Supply
Device selected; VDD = MAX;
Current: Idle
ADSC#, ADSP#, GW#, BWx#,
IDD1
55
120
110
90
85
mA
1, 2, 3
ADV#
≥ VIH; All inputs ≤ VSS + 0.2 or
≥ VDD - 0.2; Cycle time ≥ tKC (MIN)
CMOS Standby
Device deselected; VDD = MAX;
All inputs
≤ VSS + 0.2 or ≥ VDD - 0.2;
ISB2
0.4
10
mA
2, 3
All inputs static; CLK frequency = 0
TTL Standby
Device deselected; VDD = MAX;
All inputs
≤ VIL or ≥ VIH;ISB3
8
25252525
mA
2, 3
All inputs static; CLK frequency = 0
Clock Running
Device deselected; VDD = MAX;
ADSC#, ADSP#, GW#, BWx#,
ISB4
55
120
110
90
85
mA
2, 3
ADV#
≥ VIH; All inputs ≤ VSS + 0.2 or
≥ VDD - 0.2; Cycle time ≥ tKC (MIN)
MAX
NOTE: 1. IDD is specified with no output current and increases with faster cycle times. IDDQ increases with faster cycle times and
greater output loading.
2. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means
device is active (not in power-down mode).
3. Typical values are measured at 3.3V, 25°C and 10ns cycle time.
4. This parameter is sampled.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT58L512L18PT-10 制造商:Cypress Semiconductor 功能描述:512KX18 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk
MT58L512L18PT-7.5 制造商:Rochester Electronics LLC 功能描述:- Bulk
MT58L512L18PT-7.5 IT 制造商:Cypress Semiconductor 功能描述:512KX18 SRAM PLASTIC IND TEMP
MT58L512V18F 制造商:MICRON 制造商全稱:Micron Technology 功能描述:8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L512V18P 制造商:MICRON 制造商全稱:Micron Technology 功能描述:8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM
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