參數(shù)資料
型號(hào): MT58L32L36PT-7.5
元件分類(lèi): SRAM
英文描述: 32K X 36 CACHE SRAM, 4.2 ns, PQFP100
封裝: PLASTIC, TQFP-100
文件頁(yè)數(shù): 11/18頁(yè)
文件大?。?/td> 354K
代理商: MT58L32L36PT-7.5
2
1Mb: 64K x 18, 32K x 32/36 3.3V I/O, Pipelined, SCD SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L64L18P_B.p65 – Rev. B, Pub. 11/02
2002, Micron Technology, Inc.
1Mb: 64K x 18, 32K x 32/36
3.3V I/O, PIPELINED, SCD SYNCBURST SRAM
NOT RECOMENDED FOR NEW DESIGNS
FUNCTIONAL BLOCK DIAGRAM
64K x 18
16
14
ADDRESS
REGISTER
ADV#
CLK
BINARY
COUNTER AND
LOGIC
CLR
Q1
Q0
ADSC#
CE#
18
ENABLE
REGISTER
18
OE#
SENSE
AMPS
64K x 9 x 2
MEMORY
ARRAY
ADSP#
9
2
MODE
CE2
CE2#
GW#
BWE#
2
18
OUTPUT
REGISTERS
INPUT
REGISTERS
18
E
18
OUTPUT
BUFFERS
9
PIPELINED
ENABLE
SA0, SA1, SA
BWb#
BWa#
BYTE “b”
WRITE REGISTER
BYTE “a”
WRITE REGISTER
SA0'
SA1'
SA0-SA1
DQs
DQPa
DQPb
BYTE “b”
WRITE DRIVER
BYTE “a”
WRITE DRIVER
NOTE:
Functional Block Diagrams illustrate simplified device operation. See Truth Table, Pin Descriptions and
timing diagrams for detailed information.
FUNCTIONAL BLOCK DIAGRAM
32K x 32/36
ADDRESS
REGISTER
ADV#
CLK
BINARY
COUNTER
CLR
Q1
Q0
ADSP#
ADSC#
MODE
15
13
15
BWE#
GW#
CE#
CE2
CE2#
OE#
ENABLE
REGISTER
4
OUTPUT
REGISTERS
SENSE
AMPS
32K x 8 x 4
(x32)
32K x 9 x 4
(x36)
MEMORY
ARRAY
INPUT
REGISTERS
OUTPUT
BUFFERS
E
PIPELINED
ENABLE
BWd#
BWc#
BYTE “d”
WRITE REGISTER
BYTE “c”
WRITE REGISTER
BYTE “b”
WRITE REGISTER
BYTE “a”
WRITE REGISTER
DQs
BYTE “a”
WRITE DRIVER
BYTE “b”
WRITE DRIVER
BYTE “c”
WRITE DRIVER
BYTE “d”
WRITE DRIVER
SA0, SA1, SA
BWb#
BWa#
SA0'
SA1'
SA0-SA1
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