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參數(shù)資料
| 型號： | MT55L64L36P1 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 64K x 36, 3.3V I/O, ZBT SRAM( 2Mb,3.3V輸入/輸出，靜態(tài)RAM) |
| 中文描述： | 64K的× 36，3.3V的I / O的ZBT SRAM的（處理器，3.3V的輸入/輸出，靜態(tài)內(nèi)存） |
| 文件頁數(shù)： | 19/23頁 |
| 文件大?。?/td> | 404K |
| 代理商： | MT55L64L36P1 |
19
2Mb: 128K x 18, 64K x 32/36 3.3V I/O, Pipelined ZBT SRAM
MT55L128L18P1_2.p65
–
Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
3.3V I/O, PIPELINED ZBT SRAM
NOTE:
1. For this waveform, ZZ is tied LOW.
2. Burst sequence order is determined by MODE (0 = linear, 1 = interleaved). BURST operations are optional.
3. CE# represents three signals. When CE# = 0, it represents CE# = 0, CE2# = 0, CE2 = 1.
4. Data coherency is provided for all possible operations. If a READ is initiated, the most current data is used. The most
recent data may be from the input data register.
READ/WRITE TIMING
WRITE
D(A1)
1
2
3
4
5
6
7
8
9
CLK
tKHKH
t
KLKH
t
KHKL
10
CE#
t
KHCX
t
CVKH
R/W#
CKE#
t
KHEX
t
EVKH
BWx#
ADV/LD#
t
KHAX
t
AVKH
ADDRESS
A1
A2
A3
A4
A5
A6
A7
t
KHDX
t
DVKH
DQ
COMMAND
t
KHQX1
D(A1)
D(A2)
D(A5)
Q(A4)
Q(A3)
D(A2+1)
t
KHQX
t
KHQZ
t
KHQV
WRITE
D(A2)
BURST
WRITE
D(A2+1)
READ
Q(A3)
READ
Q(A4)
BURST
READ
Q(A4+1)
WRITE
D(A5)
READ
Q(A6)
WRITE
D(A7)
DESELECT
OE#
t
GLQV
t
GLQX
t
GHQZ
t
KHQX
DON
’
T CARE
UNDEFINED
Q(A6)
Q(A4+1)
-7.5
-10
SYMBOL
t
GHQZ
t
AVKH
t
EVKH
t
CVKH
t
DVKH
t
KHAX
t
KHEX
t
KHCX
t
KHDX
MIN
MAX
4.2
MIN
MAX
5.0
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
2.0
2.0
2.0
2.0
0.5
0.5
0.5
0.5
2.0
2.0
2.0
2.0
0.5
0.5
0.5
0.5
READ/WRITE TIMING PARAMETERS
-7.5
-10
SYMBOL
t
KHKH
f
KF
t
KHKL
t
KLKH
t
KHQV
t
KHQX
t
KHQX1
t
KHQZ
t
GLQV
t
GLQX
MIN
7.5
MAX
MIN
10
MAX
UNITS
ns
MHz
ns
ns
ns
ns
ns
ns
ns
ns
133
100
2.2
2.2
3.5
3.5
4.2
5.0
1.5
1.5
1.5
1.5
1.5
1.5
3.5
4.2
3.5
5.0
0
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT58L128L18FT-10 | 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
| MT58L128L18FT-6.8 | 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
| MT58L128L18FT-7.5 | 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
| MT58L128L18FT-8.5 | 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
| MT58L128V18FT-10 | 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT55L64L36P1T-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT55V1MV18FT-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT55V1MV18FT-11 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT55V1MV18PT-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT55V512V32FT-8.8 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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