參數(shù)資料
型號(hào): MT55L256L32FT-12
元件分類: SRAM
英文描述: 256K X 32 ZBT SRAM, 9 ns, PQFP100
封裝: PLASTIC, TQFP-100
文件頁數(shù): 12/25頁
文件大?。?/td> 300K
代理商: MT55L256L32FT-12
2
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 – Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
K
MODE
18
BWa#
BWb#
R/W#
CE#
CE2
CE2#
OE#
READ LOGIC
DQs
DQPa
DQPb
DQPc
DQPd
256K x 8 x 4
(x32)
256K x 9 x 4
(x36)
MEMORY
ARRAY
E
INPUT
REGISTER
BWc#
BWd#
ADDRESS
REGISTER
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
18
16
18
BURST
LOGIC
SA0'
SA1'
D1
D0
Q1
Q0
SA0
SA1
18
ADV/LD#
CE
ADV/LD#
K
CLK
CKE#
WRITE
DRIVERS
D
A
T
A
S
T
E
R
I
N
G
S
E
N
S
E
A
M
P
S
WRITE ADDRESS
REGISTER
SA0, SA1, SA
O
U
T
P
U
T
B
U
F
E
R
S
E
36
NOTE: Functional block diagrams illustrate simplified device operation. See truth table, pin descriptions, and timing diagrams
for detailed information.
FUNCTIONAL BLOCK DIAGRAM
256K x 32/36
FUNCTIONAL BLOCK DIAGRAM
512K x 18
SA0, SA1, SA
K
MODE
19
BWa#
BWb#
R/W#
CE#
CE2
CE2#
OE#
READ LOGIC
DQs
18
D
A
T
A
S
T
E
R
I
N
G
512K x 9 x 2
MEMORY
ARRAY
E
ADDRESS
REGISTER
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
19
17
19
BURST
LOGIC
SA0'
SA1'
D1
D0
Q1
Q0
SA0
SA1
19
ADV/LD#
CE
ADV/LD#
K
S
E
N
S
E
A
M
P
S
CLK
CKE#
WRITE
DRIVERS
WRITE ADDRESS
REGISTER
INPUT
REGISTER
18
O
U
T
P
U
T
B
U
F
E
R
S
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