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| 型號(hào)： | MT46V4M16 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 1 Meg x 16 x 4 banks DDR SDRAM(1M x 16 x 4組，雙數(shù)據(jù)速率同步動(dòng)態(tài)RAM) |
| 中文描述： | 1梅格× 16 × 4銀行DDR SDRAM內(nèi)存（100萬(wàn)× 16 × 4組，雙數(shù)據(jù)速率同步動(dòng)態(tài)RAM）的 |
| 文件頁(yè)數(shù)： | 41/69頁(yè) |
| 文件大小： | 2369K |
| 代理商： | MT46V4M16 |
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41
64Mb: x4, x8, x16 DDR SDRAM
64Mx4x8x16DDR_B.p65
–
Rev. B; Pub. 10/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
64Mb: x4, x8, x16
DDR SDRAM
TRUTH TABLE 4 – CURRENT STATE BANK
n
– COMMAND TO BANK
m
(Notes: 1-6; notes appear below and on next page)
CURRENT STATE CS# RA S#CA S# WE#
Any
H
L
Idle
X
Row
L
Activating,
L
Active, or
L
Precharging
L
Read
L
(Auto-
L
Precharge
L
Disabled)
L
Write
L
(Auto-
L
Precharge
L
Disabled)
L
Read
L
(With Auto-
L
Precharge)
L
L
Write
L
(With Auto-
L
Precharge)
L
L
COMMA ND/A CTION
DESELECT (NOP/continue previous operation)
NO OPERATION (NOP/continue previous operation)
Any Command Otherwise Allowed to Bank m
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE
NOTES
X
H
X
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
X
H
X
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
X
H
X
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
7
7
7
7, 9
7, 8
7
7, 3a
7, 9, 3a
7, 3a
7, 3a
NOTE:
1. This table applies when CKE
n-1
was HIGH and CKE
n
is HIGH (see Truth Table 2) and after
t
XSNR has been
met (if the previous state was self refresh).
2. This table describes alternate bank operation, except where noted (i.e., the current state is for bank
n
and
the commands shown are those allowed to be issued to bank
m,
assuming that bank m is in such a state
that the given command is allowable). Exceptions are covered in the notes below.
(Notes continued on next page)
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| MT46V2M32LG | DOUBLE DATA RATE DDR SDRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT46V4M32 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM |
| MT46V4M32LG | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM |
| MT46V64M16 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DOUBLE DATA RATE (DDR) SDRAM |
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