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    參數(shù)資料
    型號(hào): MT46V4M16
    廠商: Micron Technology, Inc.
    英文描述: 1 Meg x 16 x 4 banks DDR SDRAM(1M x 16 x 4組,雙數(shù)據(jù)速率同步動(dòng)態(tài)RAM)
    中文描述: 1梅格× 16 × 4銀行DDR SDRAM內(nèi)存(100萬(wàn)× 16 × 4組,雙數(shù)據(jù)速率同步動(dòng)態(tài)RAM)的
    文件頁(yè)數(shù): 19/69頁(yè)
    文件大?。?/td> 2369K
    代理商: MT46V4M16
    19
    64Mb: x4, x8, x16 DDR SDRAM
    64Mx4x8x16DDR_B.p65
    Rev. B; Pub. 10/00
    Micron Technology, Inc., reserves the right to change products or specifications without notice.
    2000, Micron Technology, Inc.
    64Mb: x4, x8, x16
    DDR SDRAM
    Figure 8
    Consecutive READ Bursts
    CK
    CK#
    COMMAND
    READ
    NOP
    READ
    NOP
    NOP
    NOP
    ADDRESS
    Bank,
    Col
    n
    Bank,
    Col
    b
    COMMAND
    READ
    NOP
    READ
    NOP
    NOP
    NOP
    ADDRESS
    Bank,
    Col
    n
    Bank,
    Col
    b
    CL = 2
    CK
    CK#
    DQ
    DQS
    CL = 2.5
    DQ
    DQS
    DO
    n
    DO
    b
    DO
    n
    DO
    b
    T0
    T1
    T2
    T3
    T2n
    T3n
    T4
    T5
    T4n
    T5n
    T0
    T1
    T2
    T3
    T2n
    T3n
    T4
    T5
    T4n
    T5n
    NOTE
    : 1. DO
    n
    (or
    b
    ) = data-out from column
    n
    (or column
    b
    ).
    2. Burst length = 4 or 8 (if 4, the bursts are concatenated; if 8, the second burst interrupts the first).
    3. Three subsequent elements of data-out appear in the programmed order following DO
    n.
    4. Three (or seven) subsequent elements of data-out appear in the programmed order following DO
    b.
    5. Shown with nominal
    t
    AC,
    t
    DQSCK, and
    t
    DQSQ.
    6. Example applies only when READ commands are issued to same device.
    DON
    T CARE
    TRANSITIONING DATA
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