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參數(shù)資料
| 型號： | MSAEI38N10A |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | HERMETIC SEALED, POWER PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 51K |
| 代理商： | MSAEI38N10A |
MSAEI38N10A
MSAFI38N10A
100 Volts
38 Amps
55 m
Features
Ultrafast rectifier in parallel with the body diode (MSAE type only)
Rugged polysilicon gate cell structure
Increased Unclamped Inductive Switching (UIS) capability
Hermetically sealed, surface mount power package
Low package inductance
Very low thermal resistance
Uses IRFC250 die
Reverse polarity available upon request
DESCRIPTION
SYMBOL
MAX.
UNIT
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ
≥ 25°C
BVDSS
100
Volts
Drain-to-Gate Breakdown Voltage @ TJ
≥ 25°C, RGS= 1 M
BVDGR
100
Volts
Continuous Gate-to-Source Voltage
VGS
+/-20
Volts
Transient Gate-to-Source Voltage
VGSM
+/-30
Volts
Continuous Drain Current
Tj= 25
°C
Tj=
100
°C
ID25
ID100
38
24
Amps
Peak Drain Current, pulse width limited by TJmax
IDM
150
Amps
Repetitive Avalanche Current
IAR
38
Amps
Repetitive Avalanche Energy
EAR
15
mJ
Single Pulse Avalanche Energy
EAS
150
mJ
Voltage Rate of Change of the Recovery Diode
@ IS
≤ IDM, di/dt ≤ 100 A/s, VDD ≤ VDSS, TJ ≤ 150°C
dv/dt
5.5
V/ns
Power Dissipation
PD
300
Watts
Junction Temperature Range
Tj
-55 to +150
°C
Storage Temperature Range
Tstg
-55 to +150
°C
Continuous Source Current (Body Diode)
IS
38
Amps
Pulse Source Current (Body Diode)
ISM
150
Amps
Thermal Resistance, Junction to Case
θ
JC
0.4
°C/W
Maximum Ratings @ 25
°°C (unless otherwise specified)
Mechanical Outline
Datasheet# MSC0257 Rev. A 11/6/96
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
DRAIN
SOURCE
GATE
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