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參數(shù)資料
| 型號(hào)： | MSAGA11F120D-L |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 22 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | DIE-2 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 221K |
| 代理商： | MSAGA11F120D-L |
MSC0947.PDF 2/5/99
All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, TC = 25
°C unless otherwise specified
DESCRIPTION:
N-Channel enhancement mode high density IGBT die
Passivation: Polyimide, 20 um, over Silicon Nitride, .8um
Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical.
Collector/Gate Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach
FEATURES:
Low Forward Voltage Drop, Low Tail Current
Avalanche and Surge Rated
High Freq. Switching to 20KHz
Ultra Low Leakage Current
RBSOA and SCSOA Rated
Available with Lot Acceptance Testing Spec MSAGA11F120DL, "-L" Suffix
MAXIMUM RATINGS:
STATIC ELECTRICAL CHARACTERISTICS:
2830 S. Fairview Street
Santa Ana, CA 92704
Phone: (714) 979-8220
Fax:
(714) 559-5989
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1200
Volts
VCGR
Collector-Gate Voltage (RGE = 20K
)
1200
Volts
VEG
Emitter-Collector Voltage
15
Volts
VGE
Gate-Emitter Voltage
±20
Volts
IC1
Continuous Collector Current @ TC = 25
°C
22
Amps
IC2
Continuous Collector Current @ TC = 110
°C
11
Amps
ICM
Surge Current (10
s x 4ms double exponential, see figure 2)
55
Amps
ICM1
Pulsed Collector Current @ TC = 25
°C
44
Amps
ICM2
Pulsed Collector Current @ TC = 110
°C
22
Amps
ICsurge2
Surge Current: tp= 2 us (ton= 1.5
s; toff= 0.5 s to 50% decay), 10 pulses, duty
cycle= 1:2,500,000 (12 pulses/minute)
400
Apk
EAS
Single Pulse Avalanche Energy -
10
mJ
PD
Total Power Dissipation
125
Watts
TJ, TSTG
Operating and Storage: Junction Temperature Range
-55 to 150
°C
MSAGA11F120D
Fast IGBT Die for Implantable
Cardio Defibrillator
Applications
Surge
Current
(I
CM
)-
Amps
10
s
x
4ms
double
exponential
55
10
s
4000
s
Time -
sec
35-50% of
ICM Max
SYMBOL
CHARACTERISTIC / TEST CONDITIONS
MIN
TYP
MAX
UNIT
BVCES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.5mA)
1200
Volts
RBVCES
Collector-Emitter Reverse Breakdown Voltage
(VGE = 20V, IC = 10mA)
-15
Volts
Gate Threshold Voltage (VCE = VGE, IC = 350A, TJ = 37°C
5.7
Volts
VGE(TH)
Gate Threshold Voltage (VCE = VGE, IC = 350A, TJ = 25°C
4.5
5.5
6.5
Volts
VCE (ON)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, TJ = 25°C)
3.1
3.5
Volts
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, TJ = 37°C)
3.5
Volts
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, TJ = 125°C)
4
4.5
Volts
ICES
Collector Cut-off Current (VCE = 80%VCES, VGE = 0V, TJ = 25°C)
0.02
10
uA
Collector Cut-off Current (VCE = 80%VCES, VGE = 0V, TJ = 37°C)
0.07
uA
Collector Cut-off Current (VCE = 80%VCES, VGE = 0V, TJ = 125°C)
1000
uA
Gate-Emitter Leakage Current (VGE = ±25V, VCE =0V)
2
±100
nA
IGES
Gate-Emitter Leakage Current (VGE = ±25V, VCE =0V), Tj= 37
°C
4
nA
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