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參數(shù)資料
| 型號： | MSAFA1N100DL |
| 廠商： | MICROSEMI CORP |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 1000 V, 13.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DIE-2 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 219K |
| 代理商： | MSAFA1N100DL |
MSC1054.PDF 3/
22/01
All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, TC = 25
°C unless otherwise specified
MSAFA1N100D
Fast MOSFET Die for
Implantable Cardio Defibrillator
Applications
DESCRIPTION:
N-Channel enhancement mode high density MOSFET die
Passivation: oxynitride, 4um
Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical.
Backside Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach
FEATURES:
Low On-state resistance
Avalanche and Surge Rated
High Freq. Switching
Ultra Low Leakage Current
UIS rated
Available with Lot Acceptance Testing Spec MSAFA1N100DL, "-L" Suffix
MAXIMUM RATINGS:
STATIC ELECTRICAL CHARACTERISTICS:
2830 S. Fairview Street
Santa Ana, CA 92704
Phone: (714) 979-8220
Fax:
(714) 559-5989
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain - Source Voltage
1000
Volts
VGS
Gate - Source Voltage
±20
Volts
ID1
Continuous Drain Current @ TC = 25
°°°°C
1
Amps
ID2
Continuous Drain Current @ TC = 100
°°°°C
.8
Amps
IDM1
Pulsed Drain Current
x
x @ TC = 25°°°°C
4
Amps
IAR
Avalanche Current
1
Amps
EAR
Repetitive Avalanche Energy
TBD
mJ
EAS
Single Pulse Avalanche Energy
TBD
mJ
TJ, TSTG
Operating and Storage: Junction Temperature Range
-55 to 150
°°°°C
SYMBOL
CHARACTERISTIC / TEST CONDITIONS
MIN
TYP
MAX
UNIT
BVDSS
Drain - Source Breakdown Voltage (VGS = 0V, ID = 0.25mA)
1000
Volts
VGS(TH)2
Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 37
°°°°C
3.4
Volts
VGS(TH)1
Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 25
°°°°C
2
3.5
4.5
Volts
RDS(ON)1
Drain – Source On-State Resistance (VGS = 10V, ID = ID1, TJ = 25
°°°°C)
12.5
13.5
ohm
RDS(ON)2
Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 37
°°°°C)
12.5
ohm
RDS(ON)3
Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 25
°°°°C)
11.5
ohm
RDS(ON)4
Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 60
°°°°C)
15
ohm
RDS(ON)5
Drain – Source On-State Resistance (VGS = 7V, ID = ID1, TJ = 125
°°°°C)
23.5
ohm
IDSS1
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 25
°°°°C)
10
uA
IDSS2
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 37
°°°°C)
1
uA
IDSS3
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 125
°°°°C)
100
uA
IGSS1
Gate-Source Leakage Current (VGS = ±20V, VCE =0V)
±100
nA
IGSS2
Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 37
°°°°C
10
nA
IGSS3
Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 125
°°°°C
500
nA
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