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參數(shù)資料
| 型號： | MSAER57N10AR |
| 廠商： | MICROSEMI CORP |
| 元件分類： | JFETs |
| 英文描述： | 57 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HERMETIC SEALED, COOLPACK-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 0K |
| 代理商： | MSAER57N10AR |
Features
MOSKEYTM - Mosfet and Schottky in a single package
Ultra Low On-Resistance
175°C Operating Temperature
Increased Unclamped Inductive Switching (UIS) capability
Hermetically sealed, surface mount power package
Low package inductance
Very low thermal resistance
Reverse polarity available upon request (MSAER57N10AR)
Available with TX/TXV-level screening (MSAER57N10AV) or S-level
screening (MSAER57N10AS) i.a.w. Microsemi internal procedure,
PS11.50
MSAER57N10A
100 Volts
57 Amps
25 m
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
+ SCHOTTKY
Maximum Ratings @ 25
°C (unless otherwise specified)
DESCRIPTION
SYMBOL
MAX.
UNIT
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ ≥ 25°C
BVDSS
100
Volts
Continuous Gate-to-Source Voltage
VGS
+/-20
Volts
Continuous Drain Current
Tj= 25
°C
Tj= 100
°C
ID25
ID100
57
40
Amps
Peak Drain Current, pulse width limited by TJmax
IDM
180
Amps
Repetitive Avalanche Current
IAR
28
Amps
Repetitive Avalanche Energy
EAR
15
mJ
Single Pulse Avalanche Energy
EAS
200
mJ
Voltage Rate of Change of the Recovery Diode
@ IS ≤ IDM, di/dt ≤ 100 A/s, VDD ≤ VDSS, TJ ≤ 150°C
dv/dt
5.0
V/ns
Power Dissipation @ TC = 100°C
PD
215
Watts
Junction Temperature Range
Tj
-55 to +175
°C
Storage Temperature Range
Tstg
-55 to +175
°C
Continuous Source Current (Body Diode)
IS
57
Amps
Pulse Source Current (Body Diode)
ISM
360
Amps
Thermal Resistance, Junction to Case
θJC
0.7
°C/W
Mechanical Outline
CoolPackTM1
Note: Pin-out shown for
standard polarity
GATE
SOURCE
DRAIN
Revision 1
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