參數(shù)資料
型號(hào): MRFIC1859
廠商: Motorola, Inc.
英文描述: Dual-Band GSM 3.6V Integrated RF Power Amplifier(GSM 3.6V集成式射頻功放)
中文描述: 雙頻GSM 3.6V的集成RF功率放大器(手機(jī)3.6V的集成式射頻功放)
文件頁(yè)數(shù): 3/15頁(yè)
文件大?。?/td> 180K
代理商: MRFIC1859
MRFIC1859
3
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(VD1B, D2B = 3.6 V, VD1G,D2G,D3G = 3.6 V or VD1D,D2D,D3D = 36 V, Peak
measurement at 12.5% duty cycle, 4.6 ms period, TA = 25
°
C, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
GSM SECTION
(Pin = 3.0 dBm)
Frequency Range
BW
880
915
MHz
Output Power
Pout
PAE
35
36.2
dBm
Power Added Efficiency
45
53
%
Output Power @ Low Voltage (VD1G,D2G,D3G= 3.0 V)
Harmonic Output
2fo
3fo
Second Harmonic Leakage at DCS Output (Crosstalk isolation)
Pout
33.5
34.7
dBm
dBc
–35
–60
–30
–45
–25
–20
dBm
Input Return Loss
|S11|
Pon
12
dB
Output Power Isolation with Buffer On (Pin = 3.0 dBm, VD1B,D2B =
3.6 V, VD1G,D2G,D3G = 0 V)
–8.0
–3.0
dBm
Output Power Isolation (Pin = 3.0 dBm, VD1B,D2B = 0 V, VD1G,D2G,D3G =
0 V)
Poff
–42
dBm
Noise Power in Rx Band 925 to 960 MHz (100 kHz measurement band-
width)
925 to 935 MHz
935 to 960 MHz
NP
dBm
–90
-90
–67
–79
Negative Voltage (Pin = 2.0 dBm, VD1B, D2B = 3.0 V)
Negative Voltage Settling time (Pin = 3.0 dBm, VD1B,D2B stepped from 0
to 3.0 V)
VSS
TS
–4.85
V
0.7
2.0
μ
s
Stability–Spurious Output (Pout = 5.0 to 35 dBm, Load VSWR = 6:1 all
Phase Angle, Source VSWR = 3:1, at any phase angle Adjust
VD1G,D2G,D3G for specified power)
Pspur
–60
dBc
Load Mismatch Stress (Pout = 5.0 to 35 dBm, Load VSWR = 10:1 all
phase angles, 5 seconds, Adjust VD1G,D2G,D3G for specified power)
No Degradation in Output Power
Before and After Test
Positive Voltage (Pin = 3.0 dBm, VD1B = VD2B = 3.0 V)
DCS SECTION
(Pin = 5.0 dBm)
Frequency Range
VP
6
10
V
BW
1710
1785
MHz
Output Power
Pout
PAE
33
34
dBm
Power Added Efficiency
35
43
%
Output Power @ Low Voltage (VD1D,D2D,D3D= 3.0 V)
Harmonic Output
2fo
3fo
Input Return Loss
Pout
31.5
32.4
dBm
dBc
–40
–35
–35
–30
|S11|
Pon
12
dB
Output Power Isolation with Buffer On (Pin = 5.0 dBm, VD1B,D2B =
3.6 V, VD1D,D2D,D3D = 0 V)
–8.0
–2.0
dBm
Output Power Isolation (Pin = 5.0 dBm, VD1B,D2B = 0 V,
VD1D,D2D,D3D = 0 V)
Poff
–36
dBm
Noise Power in Rx Band 1805 to 1880 MHz (100 kHz measurement
bandwidth)
NP
–85
–71
dBm
Negative Voltage (Pin = 5.0 dBm, VD1B,D2B = 3.0 V)
Negative Voltage Settling time (Pin = 5.0 dBm, VD1B,D2B stepped from 0
to 3.0 V)
VSS
TS
–4.85
V
0.7
2.0
μ
s
Stability–Spurious Output (Pout = 3.0 to 33 dBm, Load VSWR = 6:1 all
Phase Angle, Source VSWR = 3:1, at any phase angle Adjust
VD1D,D2D,D3D for specified power)
Pspur
–60
dBc
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