參數(shù)資料
型號(hào)： MSB709-RT1
廠商： MOTOROLA INC
元件分類： 小信號(hào)晶體管
英文描述： PNP General Purpose Amplifier Transistor Surface Mount
中文描述： 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 111K
代理商： MSB709-RT1
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MAXIMUM RATINGS
(TA = 25
°
C)
Rating
Symbol
Value
Unit
Collector–Base Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
IC(P)
–60
Vdc
Collector–Emitter Voltage
–45
Vdc
Emitter–Base Voltage
–7.0
Vdc
Collector Current — Continuous
–100
mAdc
Collector Current — Peak
–200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
PD
TJ
Tstg
200
mW
Junction Temperature
150
°
C
Storage Temperature
–55 ~ +150
°
C
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C)
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = –10
μ
Adc, IE = 0)
Emitter–Base Breakdown Voltage (IE = –10
μ
Adc, IE = 0)
Collector–Base Cutoff Current (VCB = –45 Vdc, IE = 0)
Collector–Emitter Cutoff Current (VCE = –10 Vdc, IB = 0)
DC Current Gain(1)
(VCE = –10 Vdc, IC = –2.0 mAdc)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICEO
hFE1
–45
—
Vdc
–60
—
Vdc
–7.0
—
Vdc
—
–0.1
μ
Adc
—
–100
nAdc
210
340
—
Collector–Emitter Saturation Voltage
(IC = –100 mAdc, IB = –10 mAdc)
1. Pulse Test: Pulse Width
≤
300
μ
s, D.C.
≤
2%.
VCE(sat)
—
–0.5
Vdc
DEVICE MARKING
Marking Symbol
AR
X
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 3
Order this document
by MSB709–RT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
CASE 318D–03, STYLE 1
SC–59
2
1
3
COLLECTOR
3
2
BASE
1
EMITTER
相關(guān)PDF資料
PDF描述
MSB709-RT1 PNP General Purpose Amplifier Transistor Surface Mount
MSB709RT1 PNP General Purpose Amplifier Transistor Surface Mount
MSB709-RT1 PNP General Purpose Amplifier Transistor Surface Mount
MSB710-QT1 PNP General Purpose Amplifier Transistors Surface Mount
MSB710-RT1 PNP General Purpose Amplifier Transistor Surface Mount
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MSB-709RT1G 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:PNP General Purpose Amplifier Transistor Surface Mount
MSB709-RT1G 功能描述:兩極晶體管 - BJT 100mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MSB709-RT2 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述:
MSB710 制造商:ETL 制造商全稱:E-Tech Electronics LTD 功能描述:PNP General Purpose Amplifier Transistor Surface Mount
MSB710QT1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:PNP General Purpose Amplifier Transistors Surface Mount
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