參數(shù)資料
型號(hào): MRW54001
廠商: MOTOROLA INC
元件分類: 小信號(hào)晶體管
英文描述: MICROWAVE LINEAR POWER TRANSISTORS
中文描述: S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 62K
代理商: MRW54001
2–1
MRW54001
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
. . . designed primarily for large–signal output and driver amplifier stages in the
1.0 to 4.0 GHz frequency range.
Designed for Class A or AB, Common–Emitter Linear Power Amplifiers
Specified 20 Volt, 2.0 GHz Characteristics:
Output Power — 0.5 Watt
Power Gain — 10 to 11 dB
100% Tested for Load Mismatch at All Phase Angles with
:1 VSWR
Gold Metallization for Improved Reliability
Diffused Ballast Resistors
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCES
VEBO
TJ
Tstg
22
Vdc
Collector–Base Voltage
50
Vdc
Emitter–Base Voltage
3.5
Vdc
Operating Junction Temperature
200
°
C
Storage Temperature Range
–65 to +200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
40
°
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 10 mA, VBE = 0)
Collector–Base Breakdown Voltage
(IC = 1.0 mA, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 0.25 mA, IC = 0)
Collector Cutoff Current
(VCB = 28 V, IE = 0)
V(BR)CEO
22
Vdc
V(BR)CES
50
Vdc
V(BR)CBO
45
Vdc
V(BR)EBO
3.5
Vdc
ICBO
0.25
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 5.0 V)
hFE
20
120
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 V, IE = 0, f = 1.0 MHz)
Cob
3.5
pF
(continued)
Order this document
by MRW54001/D
SEMICONDUCTOR TECHNICAL DATA
10–11 dB
1.0–4.0 GHz
0.5 WATT
MICROWAVE LINEAR
POWER TRANSISTORS
CASE 400–01, STYLE 1
(TW200)
REV 1
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