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參數(shù)資料
| 型號(hào)： | MRFIC1859 |
| 廠商： | Motorola, Inc. |
| 英文描述： | Dual-Band GSM 3.6V Integrated RF Power Amplifier(GSM 3.6V集成式射頻功放) |
| 中文描述： | 雙頻GSM 3.6V的集成RF功率放大器（手機(jī)3.6V的集成式射頻功放） |
| 文件頁數(shù)： | 13/15頁 |
| 文件大?。?/td> | 180K |
| 代理商： | MRFIC1859 |
MRFIC1859
13
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
detected and regulated at –5.0 V, the MC33170 enables a
N–channel MOSFET to be driven.
The NMOS is used as a ballast transistor whose
drain–source resistance is controlled by Vramp. This allows to
supply the PA with a voltage from 0 V (Vramp = 0 V) to Vbat
(Vramp = 2.0 V) and hence to control the output power. Such
a way of control provides an excellent predictability of the RF
output power (since the output voltage is proportional to the
drain voltage) and eliminates the need for a power or current
detection loop.
The band selection is achieved by setting the BS pin of the
MC33170 to 0 V (GSM) or 1.0 V (DCS), hence biasing the
GSM or DCS transistors through BiasGSM and BiasDCS
pins.
Burst Mode
In order to perform burst mode measurements, the
following time can be used as a guideline.
CE
TxEn
(& Pin)
Vramp
2.0 V
0 V
2.0 V
0 V
2.0 V
0 V
10
μ
s
1.0
μ
s
Figure 25.
– First the MC33170 must be awaken through CE to
activate its Low Drop Out Regulator. The BS pin has also
to be set according to the selected frequency band.
– Then TxEn is set high which supply the buffer stages and
activates the Negative and Positive Voltage Generation.
TxEn signal can be used to switch the input power (using
a driver or attenuator) in order to provide higher isolation
for on/off burst dynamic.
– Vramp (Pin 1) can be applied soon after TxEn since the
internal negative voltage generator settles in less than
1.0
μ
s.
References (Motorola Application Notes)
AN1599 – Power Control with the MRFIC0913 GaAs
Integrated Power Amplifier and MC33169 Support IC.
AN1697 – GSM900/DCS1800 Dual–Band 3.6 V Power
Amplifier Solution with Open Loop Control Scheme.
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