參數(shù)資料
型號: MRF9130LSR3
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: RF Power Field Effect Transistors
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-780S, CASE 465A-06, 2 PIN
文件頁數(shù): 5/12頁
文件大小: 557K
代理商: MRF9130LSR3
5
MRF9130LR3 MRF9130LSR3
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
Figure 3. Power Gain and Input Return Loss versus
Frequency
Figure 4. Power Gain and Efficiency versus
Output Power
Figure 5. Power Gain versus Output Power
Figure 6. Power Gain versus Output Power
Figure 7. Power Gain versus Output Power
P
out
, OUTPUT POWER (dBm)
,
G
100
15
18
1
0
60
G
ps
η
V
DD
= 28 Vdc
I
DQ
= 1000 mA
f = 940 MHz
17.5
50
17
40
16.5
30
16
20
15.5
10
10
1000
P
out
, OUTPUT POWER (WATTS)
G
100
15
18
I
DQ
= 1200 mA
V
DD
= 28 Vdc
f = 940 MHz
17
16
14
10
1
800 mA
1000 mA
600 mA
1000
P
out
, OUTPUT POWER (WATTS)
G
100
15
18
V
DD
= 24 V
I
DQ
= 1000 mA
f = 940 MHz
17
16
13
10
1
1000
14
26 V
28 V
30 V
P
out
, OUTPUT POWER (WATTS)
G
100
15
18
T
C
= 20
°
C
V
DD
= 28 Vdc
I
DQ
= 1000 mA
f = 940 MHz
17
16
14
10
1
1000
25
°
C
50
°
C
85
°
C
f, FREQUENCY (MHz)
I
G
940
13
900
25
G
ps
V
DD
= 28 Vdc
I
DQ
= 1000 mA
18
0
17
5
16
10
15
15
14
20
920
1000
960
980
IRL
60 W
130 W
130 W
P
out
= 60 W
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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MRF9135L 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF9135LR3 功能描述:射頻MOSFET電源晶體管 RF PWR LDMOS NI-780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9135LR5 功能描述:射頻MOSFET電源晶體管 135W 900MHZ LDMOS NI780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9135LSR3 功能描述:射頻MOSFET電源晶體管 RF PWR LDMOS NI780LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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