參數(shù)資料
型號： MRF9130LSR3
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： RF Power Field Effect Transistors
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： NI-780S, CASE 465A-06, 2 PIN
文件頁數(shù)： 2/12頁
文件大?。?/td> 557K
代理商： MRF9130LSR3
MRF9130LR3 MRF9130LSR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vds, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vds, V
GS
= 0 Vdc)
I
DSS
—
—
1
μ
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 450
μ
Adc)
V
GS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1000 mAdc)
V
GS(Q)
—
3.6
—
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
V
DS(on)
—
0.2
0.4
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 9 Adc)
g
fs
—
12
—
S
DYNAMIC CHARACTERISTICS
(1)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
—
110
—
pF
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
4.4
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Power Output, 1 dB Compression Point
(V
DD
= 28 Vdc, I
DQ
= 1000 mA, f = 921 and 960 MHz)
P1dB
120
135
—
W
Common-Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 130 W, I
DQ
= 1000 mA, f = 921 and 960 MHz)
G
ps
15.5
16.5
—
dB
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 130 W, I
DQ
= 1000 mA, f = 921 and 960 MHz)
η
43
48
—
%
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 130 W, I
DQ
= 1000 mA, f = 921 and 960 MHz)
IRL
—
-12
-9
dB
Output Mismatch Stress
(V
DD
= 28 Vdc, P
out
= 130 W CW, I
DQ
= 1000 mA,
f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally input matched.
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF9135L 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF9135LR3 功能描述:射頻MOSFET電源晶體管 RF PWR LDMOS NI-780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9135LR5 功能描述:射頻MOSFET電源晶體管 135W 900MHZ LDMOS NI780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9135LSR3 功能描述:射頻MOSFET電源晶體管 RF PWR LDMOS NI780LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9135LSR5 功能描述:射頻MOSFET電源晶體管 RF PWR LDMOS NI780LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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