參數(shù)資料
型號(hào)： MRF9045
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： RF POWER FIELD EFFECT TRANSISTORS
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CASE 360B-05, 3 PIN
文件頁數(shù)： 2/12頁
文件大小： 648K
代理商： MRF9045
MRF9045MR1 MRF9045MBR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
1
μ
Adc
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 150
μ
Adc)
V
GS(th)
2
2.8
4
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 350 mAdc)
V
GS(Q)
3
3.7
5
Vdc
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
V
DS(on)
—
0.22
0.4
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
g
fs
—
4
—
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
iss
—
70
—
pF
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
—
38
—
pF
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.7
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system)
Two–Tone Common–Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
G
ps
17
19
—
dB
Two–Tone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η
38
41
—
%
3rd Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
—
–31
–28
dBc
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
—
–14
–9
dB
Two–Tone Common–Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
G
ps
—
19
—
dB
Two–Tone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
η
—
41
—
%
3rd Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD
—
–31
—
dBc
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL
—
–13
—
dB
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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參數(shù)描述
MRF9045GMR1 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述:
MRF9045GNR1 功能描述:射頻MOSFET電源晶體管 45W 945MHZ LDMOS TO270N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9045LR1 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9045LR1_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF9045LR5 功能描述:射頻MOSFET電源晶體管 45W 945MHZ LDMOS NI360L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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