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參數(shù)資料
| 型號(hào)： | MRF9045 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER FIELD EFFECT TRANSISTORS |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 360B-05, 3 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 648K |
| 代理商： | MRF9045 |
1
MRF9045MR1 MRF9045MBR1
Motorola, Inc. 2003
The RF Sub–Micron MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common–source amplifier applications in
28 volt base station equipment.
Typical Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 19 dB
Efficiency — 41% (Two Tones)
IMD — –31 dBc
Integrated ESD Protection
Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz,
45 Watts CW Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Dual–Lead Boltdown Plastic Package Can Also Be Used As Surface
Mount.
TO–272 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
TO–270 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
65
Vdc
Gate–Source Voltage
V
GS
+15, –0.5
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
177
1.18
Watts
W/
°
C
Storage Temperature Range
T
stg
–65 to +150
°
C
Operating Junction Temperature
T
J
175
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.85
°
C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology
Rating
Per JESD 22–A113
3
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF9045MR1/D
SEMICONDUCTOR TECHNICAL DATA
945 MHz, 45 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1265–08, STYLE 1
TO–270
PLASTIC
MRF9045MR1
CASE 1337–03, STYLE 1
TO–272 DUAL LEAD
PLASTIC
MRF9045MBR1
REV 6
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9045GMR1 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF9045GNR1 | 功能描述:射頻MOSFET電源晶體管 45W 945MHZ LDMOS TO270N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9045LR1 | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9045LR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9045LR5 | 功能描述:射頻MOSFET電源晶體管 45W 945MHZ LDMOS NI360L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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