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參數(shù)資料
| 型號： | MRF9130L |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | LEAD FREE A3932SEQ-T WITH TAPE & REEL |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 557K |
| 代理商： | MRF9130L |
1
MRF9130LR3 MRF9130LSR3
Motorola, Inc. 2004
The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 921 to 960 MHz, the high gain and broadband performance
of these devices make them ideal for large-signal, common-source amplifier
applications in 28 volt base station equipment.
Typical Performance for GSM Frequencies, 921 to 960 MHz, 28 Volts
Output Power @ P1dB — 135 Watts
Power Gain — 16.5 dB @ 130 Watts Output Power
Efficiency — 48% @ 130 Watts Output Power
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 28 Vdc, All Frequency Band,
130 Watts CW Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Low Gold Plating Thickness on Leads, 40
μ″
Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
- 0.5, +15
Vdc
Total Device Dissipation @ T
C
=
25
°
C
Derate above 25
°
C
P
D
298
1.7
Watts
W/
°
C
Storage Temperature Range
T
stg
- 65 to +200
°
C
Operating Junction Temperature
T
J
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.6
°
C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
Charge Device Model
C7 (Minimum)
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF9130L/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF9130LR3
MRF9130LSR3
GSM/GSM EDGE
921-960 MHz, 130 W, 28 V
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI-780
MRF9130LR3
CASE 465A-06, STYLE 1
NI-780S
MRF9130LSR3
REV 2
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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| MRF9130LR3 | SEE A3938SLD-T |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9130LR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF9130LSR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF9135L | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF9135LR3 | 功能描述:射頻MOSFET電源晶體管 RF PWR LDMOS NI-780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9135LR5 | 功能描述:射頻MOSFET電源晶體管 135W 900MHZ LDMOS NI780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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