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參數(shù)資料
| 型號： | MRF9120LR3 |
| 廠商： | Motorola, Inc. |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | 射頻功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 316K |
| 代理商： | MRF9120LR3 |
F
Freescale Semiconductor, Inc.
MRF9120R3 MRF9120LR3
Motorola, Inc. 2004
1
Go to: www.freescale.com
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 865 to 895 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common source amplifier applications
in 26 volt base station equipment.
Typical CDMA Performance @ 880 MHz, 26 Volts, I
DQ
= 2 x 500 mA
IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 26 Watts
Power Gain — 16 dB
Efficiency — 26%
Adjacent Channel Power —
750 kHz: -45 dBc @ 30 kHz BW
1.98 MHz: -60 dBc @ 30 kHz BW
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 120 Watts (CW)
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40
μ
″
Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
- 0.5, +65
Vdc
Gate-Source Voltage
V
GS
- 0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
250
1.43
W
W/
°
C
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.45
°
C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M1 (Minimum)
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF9120/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
CASE 375B-04, STYLE 1
NI-860
MRF9120R3
MRF9120LR3
880 MHz, 120 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFETs
For More Information On This Product,
Rev. 7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF9120R3 | RF Power Field Effect Transistors |
| MRF9130L | LEAD FREE A3932SEQ-T WITH TAPE & REEL |
| MRF9130LR3 | SEE A3938SLD-T |
| MRF9130LSR3 | RF Power Field Effect Transistors |
| MRF9180 | 30V N-Channel PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9120LR5 | 功能描述:射頻MOSFET電源晶體管 120W 880MHZ NI860L FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9120R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF9130L | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF9130LR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF9130LSR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
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