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參數(shù)資料
| 型號(hào)： | MRF7S35015HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-400S-240, CASE 465J-02, 2 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 819K |
| 代理商： | MRF7S35015HSR3 |
6
RF Device Data
Freescale Semiconductor
MRF7S35015HSR3
TYPICAL CHARACTERISTICS
1
0
30
00.2
20
15
Pin, INPUT POWER (WATTS) PULSED
Figure 9. Pulsed Output Power versus
Input Power
P out
,O
UT
PU
T
POWER
(W
ATTS)
PU
LSED
0.4
25
VDD =32 Vdc,IDQ =50 mA
Pulse Width = 100 μsec, Duty Cycle = 20%
10
3100 MHz --30_C 3300 MHz --30_C
3100 MHz 25_C
3500 MHz --30_C
3300 MHz 85_C
3300 MHz 25_C
3500 MHz 85_C
3100 MHz 85_C
3500 MHz 25_C
5
0.6
0.8
11
17
1
0
60
50
30
Pout, OUTPUT POWER (WATTS) PULSED
Figure 10. Pulsed Power Gain and Drain Efficiency
versus Output Power — 3100 MHz
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
16
30
TC =--30_C
85_C
40
15
14
VDD =32 Vdc,IDQ = 50 mA, f = 3100 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
13
12
10
20
10
Gps
--30_C
85_C
25_C
ηD
12
18
1
0
60
50
30
Pout, OUTPUT POWER (WATTS) PULSED
Figure 11. Pulsed Power Gain and Drain Efficiency
versus Output Power — 3300 MHz
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
17
30
TC =--30_C
85_C
40
16
15
VDD =32 Vdc,IDQ = 50 mA, f = 3300 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
14
13
10
20
10
Gps
--30_C
85_C
25_C
ηD
12
19
1
10
50
45
30
Pout, OUTPUT POWER (WATTS) PULSED
Figure 12. Pulsed Power Gain and Drain Efficiency
versus Output Power — 3500 MHz
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
17
30
TC =--30_C
85_C
40
16
15
VDD =32 Vdc,IDQ = 50 mA, f = 3500 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
14
13
10
20
15
Gps
--30_C
85_C
25_C
ηD
18
11
25
35
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S35015HSR3_11 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF7S35015HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 PULSED 15W NI400S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S35120HSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 120W PULSED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S35120HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 120W PULSED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38010H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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