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參數(shù)資料
| 型號： | MRF7S35015HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-400S-240, CASE 465J-02, 2 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 819K |
| 代理商： | MRF7S35015HSR3 |
MRF7S35015HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
35
0.1
1000
020
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain--Source Voltage
C,
CA
PA
CIT
ANCE
(pF
)
30
Ciss
0.1
10
1
TC =25°C
10
1
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. DC Safe Operating Area
I D
,DRA
IN
CURRE
NT
(A
M
PS
)
10
1
Coss
Crss
Measured with ±30 mV(rms)ac @ 1 MHz
VGS =0 Vdc
100
TJ = 200°C
TJ = 150°C
TJ = 175°C
17
2
10
16.5
16
50
30
25
20
Pout, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
13
30
38
47
21
46
45
Pin, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Output Power versus
Input Power
44
43
42
41
23
24
25
26
27
30
P out
,O
UT
PU
T
POWER
(d
Bm)
PU
LSED
P3dB = 43 dBm (19.8 W)
Actual
Ideal
P2dB = 42.7 dBm (19 W)
13
20
1
17
16
Pout, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
G
ps
,P
OWER
GAIN
(d
B)
10
15
IDQ = 300 mA
30
50 mA
Figure 8. Pulsed Power Gain versus
Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
,P
OWER
GAIN
(d
B)
VDD =24 V
10
17
1
11
16
26 V
15
10
30
40
15
14
150 mA
100 mA
14
13
12
VDD =32 Vdc,IDQ =50 mA
Pulse Width = 100 μsec
Duty Cycle = 20%
IDQ = 50 mA, f = 3500 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
VDD =32 Vdc,IDQ = 50 mA, f = 3500 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
VDD = 32 Vdc, f = 3500 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
100
525
15
14
15
Gps
f = 3500 MHz
ηD
3300 MHz
3100 MHz
22
28
29
P1dB = 42.2 dBm (16.7 W)
28 V
30 V
32 V
15.5
14.5
13.5
35
40
45
3100 MHz
3300 MHz
3500 MHz
39
18
19
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S35015HSR3_11 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF7S35015HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 PULSED 15W NI400S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S35120HSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 120W PULSED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S35120HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 120W PULSED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38010H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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