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參數(shù)資料
| 型號： | MRF7S35015HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-400S-240, CASE 465J-02, 2 PIN |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 819K |
| 代理商： | MRF7S35015HSR3 |
MRF7S35015HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
15.25
17.25
3100
--36
44
43
41
f, FREQUENCY (MHz)
Figure 13. Pulsed Power Gain, Drain Efficiency
and IRL versus Frequency
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
17
42
16.25
16
VDD =32 Vdc,IDQ =50 mA, Pout =15 W
Pulse Width = 100 μsec, Duty Cycle = 20%
15.75
15.5
--27
Gps
ηD
16.75
16.5
3150
3200
3250 3300
3350 3400
3450 3500
--18
--9
IRL,
INPUT
RE
TURN
LO
SS
(dB
)
IRL
18
GAIN
(d
B)
28
Pout, OUTPUT POWER (dBm)
Figure 14. Single--Channel OFDM Relative Constellation Error,
Drain Efficiency and Gain versus Output Power
17.9
18.3
18.2
18.1
--45
--25
--27
--29
4
24
22
20
18
14
12
10
8
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
ηD
RC
E
(R
EL
AT
IVE
CON
STEL
LA
TION
ER
RO
R
(d
B)
--31
--33
--37
--39
--41
--43
29
30
31
32
33
36
16
6
17.8
RCE
--35
34
35
Gps
VDD =32 Vdc,IDQ = 150 mA, f = 3500 MHz, Single--Carrier
OFDM 802.16d, 64 QAM 3/4,4Bursts,10MHz
Channel Bandwidth, Input Signal
PAR = 9.5 dB @ 0.01% Probability on CCDF
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 15. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD =32 Vdc,Pout = 15 W Peak, Pulse Width = 100 μsec,
Duty Cycle = 20%, and ηD = 41%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
105
110
130
150
170
190
MTTF
(H
OU
RS
)
210
230
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S35015HSR3_11 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF7S35015HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 PULSED 15W NI400S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S35120HSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 120W PULSED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S35120HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 120W PULSED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38010H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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