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參數(shù)資料
| 型號： | MRF7S21170HR3 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | 射頻功率場效應晶體管N溝道增強型MOSFET的外側(cè) |
| 文件頁數(shù)： | 12/13頁 |
| 文件大?。?/td> | 444K |
| 代理商： | MRF7S21170HR3 |
12
RF Device Data
Freescale Semiconductor
MRF7S21170HR3 MRF7S21170HSR3
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2006
Initial Release of Data Sheet
1
June 2006
Added Class C to description of parts, pg. 1
Changeded “
≥
” to “-” in the Device Output Signal Par bullet, pg. 1
Changed typ value from
±
9 to 18 in Part-to-Part Phase Variation characteristic description in Table 4,
Typical Performances, p. 2
Expanded the characterization range in the MTTF Factor graph from 200 C to 230 C, Fig. 12, p. 7
2
Aug. 2006
Added Greater Negative Source bullet to Features section, p. 1
Corrected Fig. 14, Single-Carrier W-CDMA Spectrum, to 3.84 MHz, p. 7
3
Sept. 2006
Changed “Capable of Handling” bullet from 10:1 VSWR @ 28 Vdc to 5:1 VSWR @ 32 Vdc, pg. 1
Added “Insertion” to Part-to-Part Phase Variation characteristic description in Table 4, Typical
Performances, p. 2
Added Gain Flatness, Group Delay and Deviation from Linear Phase characteristics to Table 4, Typical
Performances, p. 2
Corrected Z6 value from “0.119” to “0.156”, corrected Z8 value from “0.156” to “0.119”, corrected Z9 value
from “0.770” to “0.077”, corrected Z11 value from “0.076” to “0.760”, Fig. 1, Test Circuit Schematic, p. 3
Added Part Number and Manufacturer for R1, R2 and R3 in Table 5, Test Circuit Component Designations
and Values, p. 3
Added Figure 10, Digital Predistortion Correction, p. 6
Corrected Fig. 15, Single-Carrier W-CDMA Spectrum, to correctly reflect integrated bandwidth offsets, p. 7
Added Figure 17, Pulsed CW Output Power versus Input Power @ 28 Vdc, p. 9
Added Figure 18, Pulsed CW Output Power versus Input Power @ 32 Vdc, p. 9
4
May 2007
Removed “Designed for Digital Predistortion Error Correction Systems” bullet as functionality is standard,
p. 1
Added “Optimized for Doherty Applications” bullet to Features section, p. 1
Operating Junction Temperature increased from 200
°
C to 225
°
C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
Removed footnote and “Measured in Functional Test” from the RF test condition voltage callout for V
GS(Q)
,
and added Fixture Gate Quiescent Voltage, V
GG(Q)
to On Characteristics table, p. 2
Updated verbiage in Typical Performances table, p. 3
Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part
numbers and updated obsoleted ATC600 series capacitors to ATC100 series, p. 4
Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider
dynamic range, p. 7
Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps
2
and listed
operating characteristics and location of MTTF calculator for device, p. 8
Fig. 14, CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single-Carrier Test Signal,
updated to include output power level at functional test, p. 8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S21170HR3_07 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S21170HR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF7S21170HR3_11 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF7S21170HR3_12 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF7S21170HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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