參數(shù)資料
型號： MRF7S38010H
廠商： 飛思卡爾半導體(中國)有限公司
英文描述： RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
中文描述： 射頻功率場效應晶體管N溝道增強型MOSFET的外側(cè)
文件頁數(shù)： 1/15頁
文件大?。?/td> 528K
代理商： MRF7S38010H
MRF7S38010HR3 MRF7S38010HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to
3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
Typical WiMAX Performance: V
DD
= 30 Volts, I
DQ
= 160 mA, P
out
=
2 Watts Avg., f = 3400-3600 MHz, 802.16d, 64 QAM
3
/
4
, 4 bursts, 7 MHz
Channel Bandwidth, Input Signal PAR = 9.5
dB @ 0.01% Probability on
CCDF.
Power Gain — 15 dB
Drain Efficiency — 17%
Device Output Signal PAR — 8.5 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset — -49
dBc in 0.5
MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 10 Watts CW
Peak Tuned Output Power
P
out
@ 1 dB Compression Point
10 Watts CW
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DS
-0.5, +65
Vdc
Gate-Source Voltage
V
GS
-6.0, +10
Vdc
Operating Voltage
V
DD
32, +0
Vdc
Storage Temperature Range
T
stg
- 65 to +150
°
C
Case Operating Temperature
T
C
150
°
C
Operating Junction Temperature
(1,2)
T
J
225
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80
°
C, 10 W CW
Case Temperature 77
°
C, 2 W CW
R
θ
JC
2.05
2.24
°
C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF7S38010H
Rev. 0, 8/2007
Freescale Semiconductor
Technical Data
MRF7S38010HR3
MRF7S38010HSR3
3400-3600 MHz, 2 W AVG., 30 V
WiMAX
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465I-02, STYLE 1
NI-400-240
MRF7S38010HR3
CASE 465J-02, STYLE 1
NI-400S-240
MRF7S38010HSR3
Freescale Semiconductor, Inc., 2007. All rights reserved.
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相關代理商/技術參數(shù)
參數(shù)描述
MRF7S38010HR3 功能描述:射頻MOSFET電源晶體管 3600MHZ 2W 30V NI400 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S38010HR5 功能描述:射頻MOSFET電源晶體管 3600MHZ 2W 30V NI400 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S38010HSR3 功能描述:射頻MOSFET電源晶體管 3600MHZ 2W 30V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S38010HSR5 功能描述:射頻MOSFET電源晶體管 3600MHZ 2W 30V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S38040HR3 功能描述:射頻MOSFET電源晶體管 3600MHZ 8W 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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