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參數(shù)資料
| 型號(hào)： | MRF6V12500HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 1197K |
| 代理商： | MRF6V12500HSR3 |
MRF6V12500HR3 MRF6V12500HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
50
0.1
10000
020
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain--Source Voltage
C,
CA
PA
CIT
ANCE
(pF
)
30
Ciss
10
1
40
Coss
Crss
Measured with ±30 mV(rms)ac @ 1 MHz
VGS =0 Vdc
100
0
160
0
VDD =50 Vdc,IDQ = 200 mA
f = 1030 MHz, Pulse Width = 128 μsec
10
100
DUTY CYCLE (%)
Figure 4. Safe Operating Area
MAXIMU
M
O
PER
AT
IN
G
T case
(°
C)
25
140
120
80
60
40
20
520
15
Pout = 525 W
Pout = 475 W
Pout = 500 W
22
30
0
100
21
20
80
60
50
40
Pout, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
ηD
14
1000
Gps
18
VDD =50 Vdc,IDQ = 200 mA, f = 1030 MHz
Pulse Width = 128 μsec, Duty Cycle = 10%
30
55
54
53
Pin, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Output Power versus
Input Power
56
52
51
50
49
32
34
36
38
40
42
P out
,O
UT
PU
T
POWER
(d
Bm)
P3dB = 57.6 dBm (575 W)
Actual
Ideal
P1dB = 57.1 dBm (511 W)
VDD =50 Vdc,IDQ = 200 mA, f = 1030 MHz
Pulse Width = 128 μsec, Duty Cycle = 10%
57
58
59
17
22
30
21
Pout, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
G
ps
,P
OWER
GAIN
(d
B)
100
20
IDQ = 800 mA
1000
600 mA
19
18
200 mA
VDD = 50 Vdc, f = 1030 MHz
Pulse Width = 128 μsec, Duty Cycle = 10%
Figure 8. Pulsed Power Gain versus
Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
,P
OWER
GAIN
(d
B)
VDD =30 V
12
22
30
16
21
35 V
20
45 V
100
1000
50 V
19
18
17
40 V
IDQ = 200 mA, f = 1030 MHz
Pulse Width = 128 μsec
Duty Cycle = 10%
1000
19
16
17
15
70
30
20
10
60
61
400 mA
13
15
14
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6V12500HSR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 500W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V13250HR3 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V13250HR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V13250HSR3 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V13250HSR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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