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參數(shù)資料
| 型號： | MRF6V12500HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 1197K |
| 代理商： | MRF6V12500HSR3 |
12
RF Device Data
Freescale Semiconductor
MRF6V12500HR3 MRF6V12500HSR3
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2009
Initial Release of Data Sheet
1
Apr. 2010
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
Added RF High Power Model availability to Product Software, p. 9
2
Sept. 2010
Maximum Ratings table: corrected VDSS from --0.5, +100 to --0.5, +110 Vdc, p. 2
Added 960--1215 MHz Broadband application as follows:
-- Typical Performance, p. 1, 2
-- Fig. 13, Test Circuit Component Layout and Table 6, Test Circuit Component Designations and Values, p. 8
-- Fig. 14, Pulsed Power Gain, Drain Efficiency and IRL versus Frequency, p. 9
-- Fig. 15, Power Gain and Drain Efficiency versus Output Power, p. 9
-- Fig. 16, Series Equivalent Source and Load Impedance, p. 10
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6V12500HSR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 500W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V13250HR3 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V13250HR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V13250HSR3 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V13250HSR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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