參數(shù)資料
型號(hào): MRF6V12500HSR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN
文件頁數(shù): 6/13頁
文件大小: 1197K
代理商: MRF6V12500HSR3
2
RF Device Data
Freescale Semiconductor
MRF6V12500HR3 MRF6V12500HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
10
μAdc
Drain--Source Breakdown Voltage
(VGS =0 Vdc, ID = 200 mA)
V(BR)DSS
110
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50 Vdc, VGS =0 Vdc)
IDSS
20
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =90 Vdc, VGS =0 Vdc)
IDSS
200
μAdc
On Characteristics
Gate Threshold Voltage
(VDS =10 Vdc, ID =1.32 mA)
VGS(th)
0.9
1.7
2.4
Vdc
Gate Quiescent Voltage
(VDD =50 Vdc, ID = 200 mAdc, Measured in Functional Test)
VGS(Q)
1.7
2.4
3.2
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID =3.26 Adc)
VDS(on)
0.25
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Crss
0.2
pF
Output Capacitance
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Coss
697
pF
Input Capacitance
(VDS =50 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
1391
pF
Functional Tests (In Freescale Narrowband Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 200 mA, Pout = 500 W Peak (50 W Avg.),
f = 1030 MHz, Pulsed, 128 μsec Pulse Width, 10% Duty Cycle
Power Gain
Gps
18.5
19.7
22.0
dB
Drain Efficiency
ηD
58.0
62.0
%
Input Return Loss
IRL
--18
--9
dB
Typical Broadband Performance — 960--1215 MHz (In Freescale 960--1215 MHz Test Fixture, 50 ohm system) VDD =50 Vdc,
IDQ = 200 mA, Pout = 500 W Peak (50 W Avg.), f = 960--1215 MHz, Pulsed, 128 μsec Pulse Width, 10% Duty Cycle
Power Gain
Gps
18.5
dB
Drain Efficiency
ηD
57.0
%
1. Part internally matched both on input and output.
相關(guān)PDF資料
PDF描述
MRF6V13250HR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6V13250HSR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6V13250HSR5 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6V2150NBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF6V2150NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6V12500HSR5 功能描述:射頻MOSFET電源晶體管 VHV6 500W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6V13250HR3 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6V13250HR5 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6V13250HSR3 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6V13250HSR5 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray