參數(shù)資料
型號： MRF6P3300HR3
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN
文件頁數(shù)： 5/24頁
文件大?。?/td> 993K
代理商： MRF6P3300HR3
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INFORMA
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MRF6P3300HR3 MRF6P3300HR5
13
RF Device Data
Freescale Semiconductor
TYPICAL TWO-TONE BROADBAND CHARACTERISTICS
Figure 22. Two-T one Power Gain versus
Output Power @ 473 MHz
21
24.5
5
IDQ = 2400 mA
2000 mA
Pout, OUTPUT POWER (WATTS) PEP
24
23
22
100
400
G
ps
,POWER
GAIN
(dB)
1600 mA
23.5
22.5
21.5
10
1200 mA
800 mA
Figure 23. Two-T one Power Gain versus
Output Power @ 560 MHz
20
23.5
5
IDQ = 2400 mA
2000 mA
Pout, OUTPUT POWER (WATTS) PEP
23
22
21
100
400
G
ps
,POWER
GAIN
(dB)
1600 mA
22.5
21.5
20.5
10
1200 mA
800 mA
Figure 24. Two-T one Power Gain versus
Output Power @ 660 MHz
18.5
21
5
IDQ = 2400 mA
2000 mA
Pout, OUTPUT POWER (WATTS) PEP
20.5
19
100
400
G
ps
,POWER
GAIN
(dB)
1600 mA
20
19.5
10
1200 mA
800 mA
Figure 25. Two-T one Power Gain versus
Output Power @ 760 MHz
16.5
19
5
IDQ = 2400 mA
2000 mA
Pout, OUTPUT POWER (WATTS) PEP
18.5
17
100
400
G
ps
,POWER
GAIN
(dB)
1600 mA
18
17.5
10
1200 mA
800 mA
VDD = 32 Vdc
f1 = 757 MHz, f2 = 763 MHz
Two-Tone Measurements
6 MHz Tone Spacing
VDD = 32 Vdc, f1 = 657 MHz, f2 = 663 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
Figure 26. Two-T one Power Gain versus
Output Power @ 857 MHz
17.5
20
5
IDQ = 2400 mA
2000 mA
Pout, OUTPUT POWER (WATTS) PEP
19.5
18
100
400
G
ps
,POWER
GAIN
(dB)
1600 mA
19
18.5
10
1200 mA
800 mA
VDD = 32 Vdc, f1 = 854 MHz, f2 = 860 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
VDD = 32 Vdc, f1 = 470 MHz, f2 = 476 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
VDD = 32 Vdc, f1 = 557 MHz, f2 = 563 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
相關(guān)PDF資料
PDF描述
MRF6P9220HR3 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6S18060MR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
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MRF6S18060NR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6P3300HR3_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P3300HR5 功能描述:MOSFET RF N-CH 32V 300W NI-860C3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6P9220HR3 功能描述:MOSFET RF N-CH 28V 47W NI-860C3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6P9220HR3_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P9220HR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
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