參數(shù)資料
型號(hào)： MRF6P3300HR3
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN
文件頁數(shù)： 12/24頁
文件大小： 993K
代理商： MRF6P3300HR3
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
2
RF Device Data
Freescale Semiconductor
MRF6P3300HR3 MRF6P3300HR5
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
3B (Minimum)
Machine Model (per EIA/JESD22-A115)
C (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current (4)
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current (4)
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
μAdc
On Characteristics (1)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 350 μAdc)
VGS(th)
1
2.2
3
Vdc
Gate Quiescent Voltage
(VDD = 32 Vdc, ID = 1600 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 2.4 Adc)
VDS(on)
—
0.22
0.3
Vdc
Dynamic Characteristics (1,2)
Reverse Transfer Capacitance
(VDS = 32 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.4
—
pF
Functional Tests (3) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQ = 1600 mA, Pout = 270 W PEP,
f1 = 857 MHz, f2 = 863 MHz
Power Gain
Gps
19
20.2
23
dB
Drain Efficiency
ηD
41
44.1
—
%
Intermodulation Distortion
IMD
—
-30.8
-28
dBc
Input Return Loss
IRL
—
-24
-9
dB
Pout @ 1 dB Compression Point, CW
(f = 860 MHz)
P1dB
—
320
—
W
1. Each side of the device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push-pull configuration.
4. Drains are tied together internally as this is a total device value.
相關(guān)PDF資料
PDF描述
MRF6P9220HR3 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6S18060MR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF6S18060MBR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF6S18060NBR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF6S18060NR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6P3300HR3_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P3300HR5 功能描述:MOSFET RF N-CH 32V 300W NI-860C3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6P9220HR3 功能描述:MOSFET RF N-CH 28V 47W NI-860C3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6P9220HR3_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P9220HR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*