參數(shù)資料
型號(hào)： MRF6409
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： NPN Silicon RF Power Transistor(NPN硅射頻功率晶體管)
中文描述： UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝： CASE 319-07, 6 PIN
文件頁(yè)數(shù)： 2/6頁(yè)
文件大小： 273K
代理商： MRF6409
MRF6409
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(ICE = 1.0 Adc, VCE = 5.0 Vdc)
hFE
20
35
80
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
18
—
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, Pout = 20 W (CW), ICQ = 50 mA, f = 960 MHz)
Gpe
10
11
—
dB
Collector Efficiency
(VCC = 26 Vdc, Pout = 20 W (CW), ICQ = 50 mA, f = 960 MHz)
η
50
60
—
%
Load Mismatch
(VCC = 26 Vdc, Pout = 15 W (CW), ICQ = 50 mA, f = 960 MHz,
Load VSWR = 3:1, All Phase Angles at Frequency of Test)
Ψ
No Degradation in Output Power
Figure 1. Test Circuit Electrical Schematic
R1
C11
RF INPUT
RF OUTPUT
C5
C1
C3
C10
P1
R3
C6
C8
R2
D1
D2
T1
B1, B2
C1
C2, C3
C4
C5
C6, C9
C7, C10
C8
Ferrite Bead
3.3 pF, Chip Capacitor, High Q
4.7 pF, Chip Capacitor, High Q
2.2 pF, Chip Capacitor, High Q
82 pF, Chip Capacitor, High Q
330 pF, Chip Capacitor, High Q
0.1
μ
F, Chip Capacitor
22
μ
F, 16 V, Tantalum Capacitor
C11
D1, D2
P1
R1
R2
R3
T1
Board
4.7
μ
F, 50 V, Tantalum Capacitor
Diode BAS16 Type or Equivalent
1.0 k
, Trimmer
3.3
, Chip Resistor
68
, Chip Resistor
2.2 k
, Resistor
NPN Transistor
Glass Teflon
,
ε
r = 2.55, H = 1/50 inch
+
–
5.0 V
B1
C2
C4
+
26 V
–
B2
D.U.T.
C9
C7
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